Datasheet SI7945DP-T1-GE3 - Vishay MOSFET, DUAL, PP, POWERPAK — 数据表

Vishay SI7945DP-T1-GE3

Part Number: SI7945DP-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, POWERPAK

Docket:
Si7945DP
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.020 at VGS = - 10 V 0.031 at VGS = - 4.5 V ID (A) - 10.9 49 - 8.8 Qg (Typ.)

Simulation Model

Specifications:

Cont Current Id: 7 A
Current Temperature: 25°C
Device Marking: SI7945DP
External Depth: 5.15 mm
External Length / Height: 1.07 mm
External Width: 6.15 mm
Full Power Rating Temperature: 25°C
Junction to Case Thermal Resistance A: 2.5 °C/W
Max Current Id: 7 A
Max Junction Temperature Tj: 150°C
Max On State Resistance: 0.02 Ohm
Max Voltage Vds: 30 V
Max Voltage Vgs: 3 V
Min Junction Temperature, Tj: -55°C
Min Voltage Vgs th: -1 V
Mounting Type: SMD
Number of Pins: 8
Number of Transistors: 2
On State Resistance: 0.02 Ohm
Operating Temperature Range: -55°C to +150°C
P Channel Gate Charge: 49nC
Package / Case: SOIC
Power Dissipation Pd: 1.4 W
Power Dissipation: 1.4 W
Pulse Current Idm: 30 A
Rds Measurement Voltage: -10 V
Transistor Case Style: SOIC PowerPAK
Transistor Polarity: Dual P
Transistor Type: MOSFET
Typ Voltage Vds: -30 V
Typ Voltage Vgs th: -3 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

其他名称:

SI7945DPT1GE3, SI7945DP T1 GE3