Datasheet SQJ970EP-T1-GE3 - Vishay MOSFET, NN CH, W DIODE, 40 V, 8 A, POPAK8L — 数据表

Vishay SQJ970EP-T1-GE3

Part Number: SQJ970EP-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, NN CH, W DIODE, 40 V, 8 A, POPAK8L

data sheetDownload Data Sheet

Docket:
SQJ970EP
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration

Specifications:

  • Continuous Drain Current Id: 8 A
  • Drain Source Voltage Vds: 40 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.016 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 48 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • International Rectifier - IRF7469PBF

其他名称:

SQJ970EPT1GE3, SQJ970EP T1 GE3