Datasheet VNS3NV04D-E - STMicroelectronics MOSFET POWER AUTOPROTECT 8-SOIC — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: MOSFET POWER AUTOPROTECT 8-SOIC

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Docket:
VNS3NV04D-E
OMNIFET II fully autoprotected Power MOSFET
Features
Max On-State resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RON ILIMH VCLAMP 120m 3.5A 40V
SO-8

Specifications:

• Continuous Drain Current Id: 1.5 A
• Current Id Max: 3.5 A
• Drain Source Voltage Vds: 55 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 120 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 4 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 45 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

其他名称:

VNS3NV04DE, VNS3NV04D E