Datasheet SI4816BDY-T1-GE3 - Vishay MOSFET, NN CH, 30 V, 8SOIC — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, NN CH, 30 V, 8SOIC

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Docket:
Si4816BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 30 Channel-2 RDS(on) () 0.0185 at VGS = 10 V 0.0225 at VGS = 4.5 V 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 6.8 6.0 11.4 9.5 Qg (Typ.) 7.8 11.6

Specifications:

• Continuous Drain Current Id: 5.8 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0155 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N Channel
• RoHS: Y-Ex

其他名称:

SI4816BDYT1GE3, SI4816BDY T1 GE3