Datasheet SI7960DP-T1-GE3 - Vishay DUAL N CHANNEL MOSFET, 60 V, 9.7 A — 数据表

详细说明

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 60 V, 9.7 A

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Docket:
Si7960DP
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A) 9.7 8.9

Specifications:

• Continuous Drain Current Id: 9.7 A
• Drain Source Voltage Vds: 60 V
• On Resistance Rds(on): 25 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

其他名称:

SI7960DPT1GE3, SI7960DP T1 GE3