Datasheet BC857BV - NXP TRANSISTOR, PNP, SOT-666 — 数据表

详细说明

Manufacturer: NXP

Description: TRANSISTOR, PNP, SOT-666

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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 45 V
• Collector Emitter Voltage Vces: -100 mV
• Continuous Collector Current Ic Max: 100 A
• Current Ic Continuous a Max: 100 A
• DC Collector Current: -100 mA
• DC Current Gain Min: 200
• DC Current Gain: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 100 MHz
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-666
• Power Dissipation Pd: 200 mW
• Power Dissipation Ptot Max: 300 mW
• Power Dissipation per device Max: 200 mW
• SMD Marking: 3F
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-666
• Transistor Polarity: PNP
• Voltage Vcbo: 50 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7