Datasheet BCV62B - NXP TRANSISTOR, DUAL, PNP, SOT-143B — 数据表

详细说明

Manufacturer: NXP

Description: TRANSISTOR, DUAL, PNP, SOT-143B

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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• Collector Emitter Voltage Vces: 650 mV
• Continuous Collector Current Ic Max: 100 mA
• Current Ic @ Vce Sat: 100 A
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: -100 mA
• DC Current Gain Min: 100
• DC Current Gain: 220
• External Depth: 2.6 mm
• External Length / Height: 1 mm
• External Width: 2.9 mm
• Gain Bandwidth ft Typ: 100 MHz
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 2
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-143B
• Power Dissipation Pd: 250 mW
• Power Dissipation Ptot Max: 250 mW
• SMD Marking: 3*P
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-143B
• Transistor Polarity: NPN
• Voltage Vcbo: 30 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7