Datasheet NTE912 - NTE Electronics TRANSISTOR ARRAY, NPN — 数据表

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Manufacturer: NTE Electronics

Description: TRANSISTOR ARRAY, NPN

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NTE912 Integrated Circuit General Purpose Transistor Array
(Three Isolated Transistors and One Differentially­Connected Transistor Pair) Description: The NTE912 consists of five general­purpose silicon NPN transistors on a common monolithic substrate in a 14­Lead DIP type package.

Two of the transistors are internally connected to form a differentially­connected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: D Two Matched Pairs of Transistors: VBE matched ±5mV Input Offset Current 2µA Max. @ IC = 1mA D 5 General Purpose Monolithic Transistors D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure: 3.2dB Typ @ 1kHz Applications: D General Use In All Types of Signal

Specifications:

• Collector Emitter Voltage V(br)ceo: 24 V
• Current Ic Continuous a Max: 50 mA
• DC Collector Current: 50 mA
• DC Current Gain: 100
• Device Marking: NTE912
• Gain Bandwidth ft Typ: 550 MHz
• Module Configuration: Five
• Mounting Type: Radial Leaded
• Number of Pins: 14
• Number of Transistors: 3
• Operating Temperature Range: -55°C to +125°C
• Package / Case: DIP
• Power Dissipation Pd: 750 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: DIP
• Transistor Polarity: NPN

RoHS: Yes

Accessories:

• Multicomp - 2227MC-14-03-10-F1