Datasheet NTE52 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 450 V — 数据表

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Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 450 V

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Docket:
NTE52 Silicon NPN Transistor High Voltage, High Speed Switch
Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high­speed power switching in inductive circuits where fall time is critical.

This device is particularly suited for line­operated switch­mode appliations. Applications: D Switching Regulators D Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Fast Turn­Off Times: 100ns Inductive Fall Time @ +25°C (Typ) 150ns Inductive Crossover Time @ +25°C (Typ) 400ns Inductive Storage Time @ +25°C (Typ) D Operating Temperature Range: ­65° to +200°C Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector­Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• DC Collector Current: 5 A
• DC Current Gain Max (hfe): 8
• Operating Temperature Range: -65°C to +200°C
• Power Dissipation Pd: 125 W
• Transistor Polarity: NPN

RoHS: Yes