Datasheet STTH102 (STMicroelectronics)

STTH102
High efficiency ultrafast diode
Main product characteristics
IF(AV) 1 A VRRM 200 V A Tj (max) 175° C A VF(max) 0.78 V trr (max) 20 ns K K
Features and benefits SMA DO-41
■ Very low conduction losses
(JEDEC DO-214AC)
■ Negligible switching losses
STTH102A STTH102
■ Low forward and reverse recovery times ■ High junction temperature
Description Order codes
The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching
Part Number Marking
mode base drive and transistor circuits. The STTH102A U12 device is also intended for use as a free wheeling diode in power supplies and other power STTH102 STTH102 switching applications. STTH102RL STTH102
Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V SMA TL = 148° C δ = 0.5 IF(AV) Average forward current 1 A DO-41 TL = 130° C δ = 0.5 Surge non repetitive forward SMA 40 IFSM tp = 10 ms Sinusoidal A current DO-41 50 Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs November 2006 Rev 5 1/7 www.st.com 7 Document Outline STTH102 High efficiency ultrafast diode Table 1. Absolute ratings (limiting values) 1 Characteristics Table 2. Thermal resistance Table 3. Static Electrical Characteristics Table 4. Dynamic electrical characteristics Figure 1. Average forward power dissipation versus average forward current (SMA) Figure 2. Average forward power dissipation versus average forward current (DO-41) Figure 3. Average forward current versus ambient temperature (d = 0.5) (SMA) Figure 4. Average forward current versus ambient temperature (d = 0.5) (DO-41) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 2 Package information Table 5. SMA Dimensions Figure 15. Footprint (dimensions in mm) Table 6. DO-41 (Plastic) Package dimensions 3 Ordering information 4 Revision history