Datasheet STTH102 (STMicroelectronics) - 2

Characteristics STTH102 1 Characteristics Table 2. Thermal resistance Symbol Parameter Value Unit
SMA 30 Rth(j-l) Junction to lead °C/W Lead length = 10 mm DO-41 50
Table 3. Static Electrical Characteristics Symbol Parameter Tests conditions Min. Typ Max. Unit
Tj = 25° C 1 IR (1) Reverse leakage current VR = VRRM µA Tj = 125° C 1 25 IF = 700 mA 0.90 T (SMA) j = 25° C V (2) F Forward voltage drop V IF = 1 A 0.97 Tj = 125° C IF = 1 A 0.68 0.78 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.65 x I 2 F(AV) + 0.130 IF (RMS)
Table 4. Dynamic electrical characteristics Symbol Parameter Tests conditions Min Typ Max Unit
I t F = 0.5 A Irr = 0.25 A rr Reverse recovery time Tj = 25° C 12 20 ns IR = 1 A I t F = 1 A dIF/dt = 50 A/ms fr Forward recovery time Tj = 25° C 50 ns VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25° C IF = 1 A dIF/dt = 50 A/ms 1.8 V
Figure 1. Average forward power dissipation Figure 2. Average forward power dissipation versus average forward current versus average forward current (SMA) (DO-41) PF(AV)(W) PF(AV)(W)
1.0 1.0 δ = 0.1 δ = 0.2 δ = 0.5 = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ δ 0.9 0.9 = 0.05 0.8 0.8 δ = 1 δ 0.7 0.7 = 1 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 T T 0.2 0.2 0.1
I
0.1
F(AV)(A)
δ
IF(AV)(A)
=tp/T tp δ=tp/T tp 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.25 0.50 0.75 1.00 1.25 2/7 Document Outline STTH102 High efficiency ultrafast diode Table 1. Absolute ratings (limiting values) 1 Characteristics Table 2. Thermal resistance Table 3. Static Electrical Characteristics Table 4. Dynamic electrical characteristics Figure 1. Average forward power dissipation versus average forward current (SMA) Figure 2. Average forward power dissipation versus average forward current (DO-41) Figure 3. Average forward current versus ambient temperature (d = 0.5) (SMA) Figure 4. Average forward current versus ambient temperature (d = 0.5) (DO-41) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 2 Package information Table 5. SMA Dimensions Figure 15. Footprint (dimensions in mm) Table 6. DO-41 (Plastic) Package dimensions 3 Ordering information 4 Revision history