Datasheet IRF9530NPbF (Infineon)
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| 文件格式/大小 | PDF / 231 Kb |
| 文件语言 | 英语 |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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文件文字版本
PD - 94980 IRF9530NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.20Ω l P-Channel G l Fully Avalanche Rated ID = -14A l Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A IDM Pulsed Drain Current -56 PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 250 mJ IAR Avalanche Current -8.4 A EAR Repetitive Avalanche Energy 7.9 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case 1.9 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 02/04/04
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A IDM Pulsed Drain Current -56 PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 250 mJ IAR Avalanche Current -8.4 A EAR Repetitive Avalanche Energy 7.9 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case 1.9 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 02/04/04