Datasheet IRF9530NPbF (Infineon) - 6
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 231 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRF9530NPbF L V 700 DS ID TOP -3.4A 600 -5.9A RG D.U.T VDD BOTTOM -8.4A IAS A DRIVER 500 -20V t 0.01Ω p 400 300 15V 200
Fig 12a.
Unclamped Inductive Test Circuit 100 E , Single Pulse Avalanche Energy (mJ) AS 0 I 25 50 75 100 125 150 175 AS Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V -10V .3µF - Q V GS QGD D.U.T. + DS V V GS G -3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 12a.
Unclamped Inductive Test Circuit 100 E , Single Pulse Avalanche Energy (mJ) AS 0 I 25 50 75 100 125 150 175 AS Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V -10V .3µF - Q V GS QGD D.U.T. + DS V V GS G -3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit