Datasheet AD8651, AD8652 (Analog Devices) - 4

制造商Analog Devices
描述50 MHz, Precision Low Distortion, Low Noise CMOS Dual Op Amp
页数 / 页20 / 4 — AD8651/AD8652. Data Sheet. Table 2. Parameter. Symbol. Conditions. Min. …
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AD8651/AD8652. Data Sheet. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit

AD8651/AD8652 Data Sheet Table 2 Parameter Symbol Conditions Min Typ Max Unit

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AD8651/AD8652 Data Sheet
V+ = 5 V, V– = 0 V, VCM = V+/2, TA = 25°C, unless otherwise specified.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS AD8651 0 V ≤ VCM ≤ 5 V 100 350 μV –40°C ≤ TA ≤ +85°C, 0 V ≤ VCM ≤ 5 V 1.4 mV –40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 5 V 1.7 mV AD8652 0 V ≤ VCM ≤ 5 V 90 300 μV –40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 5 V 0.4 1.4 mV Offset Voltage Drift TCVOS 4 μV/°C Input Bias Current IB 1 10 pA –40°C ≤ TA ≤ +85°C 30 pA –40°C ≤ TA ≤ +125°C 600 pA Input Offset Current IOS 1 10 pA –40°C ≤ TA ≤ +85°C 30 pA –40°C ≤ TA ≤ +125°C 600 pA Input Voltage Range VCM –0.1 +5.1 V Common-Mode Rejection Ratio CMRR AD8651 0.1 V < VCM < 5.1 V 80 95 dB –40°C ≤ TA ≤ +85°C, 0.1 V < VCM < 5.1 V 75 94 dB –40°C ≤ TA ≤ +125°C, 0.1 V < VCM < 5.1 V 70 90 dB AD8652 0.1 V < VCM < 5.1 V 84 100 dB –40°C ≤ TA ≤ +125°C, 0.1 V < VCM < 5.1 V 76 95 dB Large Signal Voltage Gain AVO RL = 1 kΩ, 200 mV < VO < 4.8 V 100 115 dB RL = 1 kΩ, 200 mV < VO < 4.8 V, TA = 85°C 98 114 dB RL = 1 kΩ, 200 mV < VO < 4.8 V, TA = 125°C 95 111 dB OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.97 V Output Voltage Low VOL IL = 250 µA, –40°C ≤ TA ≤ +125°C 30 mV Short-Circuit Limit ISC Sourcing 80 mA Sinking 80 mA Output Current IO 40 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V, VCM = 0 V 76 94 dB –40°C ≤ TA ≤ +125°C 74 93 dB Supply Current ISY AD8651 IO = 0 9.5 14.0 mA –40°C ≤ TA ≤ +125°C 15 mA AD8652 IO = 0 17.5 20.0 mA –40°C ≤ TA ≤ +125°C 23.5 mA INPUT CAPACITANCE CIN Differential 6 pF Common Mode 9 pF DYNAMIC PERFORMANCE Slew Rate SR G = 1, RL = 10 kΩ 41 V/µs Gain Bandwidth Product GBP G = 1 50 MHz Settling Time, 0.01% G = ±1, 2 V step 0.2 μs Overload Recovery Time VIN × G = 1.2 V+ 0.1 μs Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VIN = 2 V p-p 0.0006 % NOISE PERFORMANCE Voltage Noise Density en f = 10 kHz 5 nV/√Hz f = 100 kHz 4.5 nV/√Hz Current Noise Density in f = 10 kHz 4 fA/√Hz Rev. D | Page 4 of 20 Document Outline Features Applications Pin Configurations General Description Table of Contents Revision History Specifications Electrical Characteristics Absolute Maximum Ratings ESD Caution Thermal Resistance Typical Performance Characteristics Applications Theory of Operation Rail-to-Rail Output Stage Rail-to-Rail Input Stage Input Protection Overdrive Recovery Layout, Grounding, and Bypassing Considerations Power Supply Bypassing Grounding Leakage Currents Input Capacitance Output Capacitance Settling Time THD Readings vs. Common-Mode Voltage Driving a 16-Bit ADC Outline Dimensions Ordering Guide