Datasheet AD8067 (Analog Devices) - 8

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AD8067 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 4.
PD = Quiescent Power + (Total Drive Power − Load Power)
Parameter Rating
 V V  V 2 Supply Voltage 26.4 V = × + × D P (V I ) S OUT OUT S S –   Power Dissipation See Figure 3  2 RL  RL Common-Mode Input Voltage VEE – 0.5 V to VCC + 0.5 V If RL is referenced to VS− as in single-supply operation, then the Differential Input Voltage 1.8 V total drive power is VS × IOUT. Storage Temperature Range –65°C to +125°C Operating Temperature Range –40°C to +85°C If the rms signal levels are indeterminate, then consider the Lead Temperature (Soldering 10 sec) 300°C worst case, when VOUT = VS/4 for RL to midsupply: Junction Temperature 150°C V 2 /4 P =(V × I ) ( ) S + D S S Stresses above those listed under Absolute Maximum Ratings RL may cause permanent damage to the device. This is a stress In single-supply operation with RL referenced to VS−, worst case rating only; functional operation of the device at these or any is VOUT = VS/2. other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute Airflow increases heat dissipation effectively, reducing θJA. In maximum rating conditions for extended periods may affect addition, more metal directly in contact with the package leads device reliability. from metal traces, through holes, ground, and power planes reduces the θ
MAXIMUM POWER DISSIPATION
JA. The associated raise in junction temperature (T Figure 3 shows the maximum safe power dissipation in the J) on the die limits the maximum safe power dissipation in the AD8067 package vs. the ambient temperature for the SOT-23-5 package. At approximately 150°C, which is the glass transition (180°C/W) package on a JEDEC standard 4-layer board. θJA temperature, the plastic changes its properties. Even temporarily values are approximations. exceeding this temperature limit can change the stresses that the It should be noted that for every 10°C rise in temperature, IB package exerts on the die, permanently shifting the parametric approximately doubles (see Figure 22). performance of the AD8067. Exceeding a junction temperature of 175°C for an extended period can result in changes in the
2.0
silicon devices, potentially causing failure.
W –
The power dissipated in the package (PD) is the sum of the
1.5
quiescent power dissipation and the power dissipated in the package due to the load drive. The quiescent power is the voltage between the supply pins (VS) times the quiescent
1.0
current (IS). Assuming the load (RL) is referenced to midsupply, the total drive power is V
SOT-23-5
S/2 × IOUT, some of which is dissipated in the package and some in the load (VOUT × IOUT). The
0.5
difference between the total drive power and the load power is
MAXIMUM POWER DISSIPATION
the drive power dissipated in the package. RMS output voltages should be considered.
0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 AMBIENT TEMPERATURE – °C
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. B | Page 6 of 24 Document Outline Features Applications Connection Diagram (Top View) General Description Revision History Specifications for ±5 V Specifications for +5 V Specifications for ±12 V Absolute Maximum Ratings Maximum Power Dissipation ESD Caution Typical Performance Characteristics Test Circuits Theory of Operation Basic Frequency Response Resistor Selection for Wideband Operation DC Error Calculations Input and Output Overload Behavior Input Protection Capacitive Load Drive Layout, Grounding, and Bypassing Considerations Layout Grounding Power Supply Bypassing Applications Wideband Photodiode Preamp Using the AD8067 at Gains of Less Than 8 Single-Supply Operation High Gain, High Bandwidth Composite Amplifier Outline Dimensions Ordering Guide