Datasheet AD8614, AD8644 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Single and Quad 18 V Operational Amplifiers |
| 页数 / 页 | 16 / 3 — AD8614/AD8644. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 341 Kb |
| 文件语言 | 英语 |
AD8614/AD8644. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
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AD8614/AD8644 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
5 V ≤ VS ≤ 18 V, VCM = VS/2, TA = 25°C, unless otherwise noted.1
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1.0 2.5 mV −20°C ≤ TA ≤ +85°C 3 mV Input Bias Current IB 80 400 nA −20°C ≤ TA ≤ +85°C 500 nA Input Offset Current IOS 5 100 nA −20°C ≤ TA ≤ +85°C 200 nA Input Voltage Range 0 VS V Common-Mode Rejection Ratio CMRR VCM = 0 V to VS 60 75 dB Voltage Gain AVO VOUT = 0.5 V to VS – 0.5 V, RL = 10 kΩ 10 150 V/mV OUTPUT CHARACTERISTICS Output Voltage High VOH ILOAD = 10 mA VS − 0.15 V Output Voltage Low VOL ILOAD = 10 mA 65 150 mV Output Short-Circuit Current ISC 35 70 mA −20°C ≤ TA ≤ +85°C 30 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.25 V to ±9.25 V 80 110 dB Supply Current/Amplifier ISY 0.8 1.1 mA −20°C ≤ TA ≤ +85°C 1.5 mA DYNAMIC PERFORMANCE Slew Rate SR CL = 200 pF 7.5 V/μs Gain Bandwidth Product GBP 5.5 MHz Phase Margin Φo 65 Degrees Settling Time tS 0.01%, 10 V step 3 μs NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 12 nV/√Hz en f = 10 kHz 11 nV/√Hz Current Noise Density in f = 10 kHz 1 pA/√Hz 1 All typical values are for VS = 18 V. Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION OUTPUT SHORT-CIRCUIT PROTECTION INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL POWER DISSIPATION UNUSED AMPLIFIERS CAPACITIVE LOAD DRIVE DIRECT ACCESS ARRANGEMENT A ONE-CHIP HEADPHONE/MICROPHONE PREAMPLIFIER SOLUTION OUTLINE DIMENSIONS ORDERING GUIDE
AD8614/AD8644 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
5 V ≤ VS ≤ 18 V, VCM = VS/2, TA = 25°C, unless otherwise noted.1
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1.0 2.5 mV −20°C ≤ TA ≤ +85°C 3 mV Input Bias Current IB 80 400 nA −20°C ≤ TA ≤ +85°C 500 nA Input Offset Current IOS 5 100 nA −20°C ≤ TA ≤ +85°C 200 nA Input Voltage Range 0 VS V Common-Mode Rejection Ratio CMRR VCM = 0 V to VS 60 75 dB Voltage Gain AVO VOUT = 0.5 V to VS – 0.5 V, RL = 10 kΩ 10 150 V/mV OUTPUT CHARACTERISTICS Output Voltage High VOH ILOAD = 10 mA VS − 0.15 V Output Voltage Low VOL ILOAD = 10 mA 65 150 mV Output Short-Circuit Current ISC 35 70 mA −20°C ≤ TA ≤ +85°C 30 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.25 V to ±9.25 V 80 110 dB Supply Current/Amplifier ISY 0.8 1.1 mA −20°C ≤ TA ≤ +85°C 1.5 mA DYNAMIC PERFORMANCE Slew Rate SR CL = 200 pF 7.5 V/μs Gain Bandwidth Product GBP 5.5 MHz Phase Margin Φo 65 Degrees Settling Time tS 0.01%, 10 V step 3 μs NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 12 nV/√Hz en f = 10 kHz 11 nV/√Hz Current Noise Density in f = 10 kHz 1 pA/√Hz 1 All typical values are for VS = 18 V. Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION OUTPUT SHORT-CIRCUIT PROTECTION INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL POWER DISSIPATION UNUSED AMPLIFIERS CAPACITIVE LOAD DRIVE DIRECT ACCESS ARRANGEMENT A ONE-CHIP HEADPHONE/MICROPHONE PREAMPLIFIER SOLUTION OUTLINE DIMENSIONS ORDERING GUIDE