Datasheet AD8022 (Analog Devices) - 7
| 制造商 | Analog Devices |
| 描述 | Dual High Speed, Low Noise Op Amp |
| 页数 / 页 | 18 / 7 — Data Sheet. AD8022. ABSOLUTE MAXIMUM RATINGS. Table 3. Parameter Rating. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 330 Kb |
| 文件语言 | 英语 |
Data Sheet. AD8022. ABSOLUTE MAXIMUM RATINGS. Table 3. Parameter Rating. MAXIMUM POWER DISSIPATION. 2.0. TJ = 150. ) W. 1.5. ION (
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Data Sheet AD8022 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating
Stresses above those listed under Absolute Maximum Ratings Supply Voltage (+VS to −VS) 26.4 V may cause permanent damage to the device. This is a stress Internal Power Dissipation1 rating only; functional operation of the device at these or any 8-Lead SOIC (R) 1.6 W other conditions above those indicated in the operational 8-Lead MSOP (RM) 1.2 W section of this specification is not implied. Exposure to absolute Input Voltage (Common Mode) ±VS maximum rating conditions for extended periods may affect Differential Input Voltage ±0.8 V device reliability. Output Short-Circuit Duration Observe Power Derating Curves Storage Temperature Range −65°C to +125°C
MAXIMUM POWER DISSIPATION
Operating Temperature Range −40°C to +85°C The maximum power that can be safely dissipated by the (A Grade) AD8022 is limited by the associated rise in junction Lead Temperature Range 300°C temperature. The maximum safe junction temperature for (Soldering 10 sec) plastic encapsulated devices is determined by the glass 1 Specification is for the device in free air: transition temperature of the plastic, approximately 150°C. 8-Lead SOIC: θJA = 160°C/W. Temporarily exceeding this limit may cause a shift in 8-Lead MSOP: θJA = 200°C/W. parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. While the AD8022 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0 TJ = 150
°
C ) W 1.5 ION ( 8-LEAD SOIC PACKAGE 1.0 POWER DISSIPAT 8-LEAD MSOP UM 0.5 AXIM M 0
01053-003
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE (
°
C)
Figure 3. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. C | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTIONS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS DMT MODULATION AND MULTITONE POWER RATIO (MTPR) CHANNEL CAPACITY AND SNR POWER SUPPLY AND DECOUPLING LAYOUT CONSIDERATIONS OUTLINE DIMENSIONS ORDERING GUIDE
Data Sheet AD8022 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating
Stresses above those listed under Absolute Maximum Ratings Supply Voltage (+VS to −VS) 26.4 V may cause permanent damage to the device. This is a stress Internal Power Dissipation1 rating only; functional operation of the device at these or any 8-Lead SOIC (R) 1.6 W other conditions above those indicated in the operational 8-Lead MSOP (RM) 1.2 W section of this specification is not implied. Exposure to absolute Input Voltage (Common Mode) ±VS maximum rating conditions for extended periods may affect Differential Input Voltage ±0.8 V device reliability. Output Short-Circuit Duration Observe Power Derating Curves Storage Temperature Range −65°C to +125°C
MAXIMUM POWER DISSIPATION
Operating Temperature Range −40°C to +85°C The maximum power that can be safely dissipated by the (A Grade) AD8022 is limited by the associated rise in junction Lead Temperature Range 300°C temperature. The maximum safe junction temperature for (Soldering 10 sec) plastic encapsulated devices is determined by the glass 1 Specification is for the device in free air: transition temperature of the plastic, approximately 150°C. 8-Lead SOIC: θJA = 160°C/W. Temporarily exceeding this limit may cause a shift in 8-Lead MSOP: θJA = 200°C/W. parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. While the AD8022 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0 TJ = 150
°
C ) W 1.5 ION ( 8-LEAD SOIC PACKAGE 1.0 POWER DISSIPAT 8-LEAD MSOP UM 0.5 AXIM M 0
01053-003
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE (
°
C)
Figure 3. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. C | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTIONS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS DMT MODULATION AND MULTITONE POWER RATIO (MTPR) CHANNEL CAPACITY AND SNR POWER SUPPLY AND DECOUPLING LAYOUT CONSIDERATIONS OUTLINE DIMENSIONS ORDERING GUIDE