Datasheet AD8012 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | Dual 350 MHz Low Power Amplifier |
| 页数 / 页 | 17 / 5 — AD8012. MAXIMUM POWER DISSIPATION. 2.0. TJ = 150. 1.5. 8-LEAD SOIC. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 284 Kb |
| 文件语言 | 英语 |
AD8012. MAXIMUM POWER DISSIPATION. 2.0. TJ = 150. 1.5. 8-LEAD SOIC. PACKAGE. 1.0. 8-LEAD. 0.5. MSOP. MAXIMUM POWER DISSIPATION – W
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AD8012 MAXIMUM POWER DISSIPATION 2.0
The maximum power that can be safely dissipated by the AD8012
TJ = 150 C
is limited by the associated rise in junction temperature. The maxi- mum safe junction temperature for plastic encapsulated devices
1.5 8-LEAD SOIC
is determined by the glass transition temperature of the plastic,
PACKAGE
approximately +150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the
1.0
stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure.
8-LEAD 0.5 MSOP
The output stage of the AD8012 is designed for maximum load current capability. As a result, shorting the output to common
MAXIMUM POWER DISSIPATION – W
can cause the AD8012 to source or sink 500 mA. To ensure
0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
proper operation, it is necessary to observe the maximum power
AMBIENT TEMPERATURE – C
derating curves. Direct connection of the output to either power supply rail can destroy the device. Figure 3. Plot of Maximum Power Dissipation vs. Temperature for AD8012
Test Circuits 750 750 750 750 VOUT VIN VOUT RL R 53.6 L VIN +VS +V 49.9 S + + 0.1 F 10 F 0.1 F 10 F + + 0.1 F 10 F 0.1 F 10 F –VS –VS
Test Circuit 1. Gain = +2 Test Circuit 2. Gain = –1 –4– REV. B Document Outline FEATURES APPLICATIONS PRODUCT DESCRIPTION FUNCTIONAL BLOCK DIAGRAM SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY MAXIMUM POWER DISSIPATION Test Circuits ABSOLUTE MAXIMUM RATINGS ORDERING GUIDE Typical Performance Characteristics THEORY OF OPERATION DC GAIN CHARACTERISTICS APPLICATIONS Line Driving for HDSL Choosing the Appropriate Turns Ratio for the Transformer LAYOUT CONSIDERATIONS OUTLINE DIMENSIONS Revision History
The maximum power that can be safely dissipated by the AD8012
TJ = 150 C
is limited by the associated rise in junction temperature. The maxi- mum safe junction temperature for plastic encapsulated devices
1.5 8-LEAD SOIC
is determined by the glass transition temperature of the plastic,
PACKAGE
approximately +150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the
1.0
stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure.
8-LEAD 0.5 MSOP
The output stage of the AD8012 is designed for maximum load current capability. As a result, shorting the output to common
MAXIMUM POWER DISSIPATION – W
can cause the AD8012 to source or sink 500 mA. To ensure
0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
proper operation, it is necessary to observe the maximum power
AMBIENT TEMPERATURE – C
derating curves. Direct connection of the output to either power supply rail can destroy the device. Figure 3. Plot of Maximum Power Dissipation vs. Temperature for AD8012
Test Circuits 750 750 750 750 VOUT VIN VOUT RL R 53.6 L VIN +VS +V 49.9 S + + 0.1 F 10 F 0.1 F 10 F + + 0.1 F 10 F 0.1 F 10 F –VS –VS
Test Circuit 1. Gain = +2 Test Circuit 2. Gain = –1 –4– REV. B Document Outline FEATURES APPLICATIONS PRODUCT DESCRIPTION FUNCTIONAL BLOCK DIAGRAM SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY MAXIMUM POWER DISSIPATION Test Circuits ABSOLUTE MAXIMUM RATINGS ORDERING GUIDE Typical Performance Characteristics THEORY OF OPERATION DC GAIN CHARACTERISTICS APPLICATIONS Line Driving for HDSL Choosing the Appropriate Turns Ratio for the Transformer LAYOUT CONSIDERATIONS OUTLINE DIMENSIONS Revision History