AD8072/AD8073ABSOLUTE MAXIMUM RATINGS1MAXIMUM POWER DISSIPATION Supply Voltage . 13.2 V The maximum power that can be safely dissipated by the AD8072 Internal Power Dissipation2 and AD8073 is limited by the associated rise in junction tem- AD8072 8-Lead Plastic (N) . 1.3 Watts perature. The maximum safe junction temperature for plastic AD8072 8-Lead Small Outline (SO-8) . 0.9 Watts encapsulated devices is determined by the glass transition tem- AD8072 8-Lead µSOIC (RM) . 0.6 Watts perature of the plastic, approximately 150°C. Exceeding this AD8073 14-Lead Plastic (N) . 1.6 Watts limit temporarily may cause a shift in parametric performance AD8073 14-Lead Small Outline (R) . 1.0 Watts due to a change in the stresses exerted on the die by the package. Input Voltage (Common Mode) . ± VS Exceeding a junction temperature of 175°C for an extended Differential Input Voltage . ± 1.25 V period can result in device failure. Output Short Circuit Duration . While the AD8072 and AD8073 are internally short circuit pro- . Observe Power Derating Curves tected, this may not be sufficient to guarantee that the maximum Storage Temperature Range junction temperature (150°C) is not exceeded under all condi- N, R, RM Packages . –65°C to +125°C tions. To ensure proper operation, it is necessary to observe the Lead Temperature Range (Soldering 10 sec) . 300°C maximum power derating curves shown in Figures 2 and 3. NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma- 2.0 nent damage to the device. This is a stress rating only; functional operation of the 8-LEAD MINI-DIP PACKAGETJ = 150 ⴗ C device at these or any other conditions above those indicated in the operational W section of this specification is not implied. Exposure to absolute maximum rating – conditions for extended periods may affect device reliability. 1.5 2Specification is for device in free air: 8-Lead Plastic Package: θJA = 90°C/W 8-LEAD SOIC PACKAGE 8-Lead SOIC Package: θJA = 140°C/W 8-Lead µSOIC Package: θ 1.0 JA = 214°C/W 14-Lead Plastic Package: θJA = 75°C/W 14-Lead SOIC Package: θJA = 120°C/W SOIC0.5ORDERING GUIDEMAXIMUM POWER DISSIPATIONTemperaturePackagePackageModelRangeDescriptionOption0–50 –40 –30 –20 –1001020304050607080 90AMBIENT TEMPERATURE – ⴗ C *AD8072ARM –40°C to +85°C 8-Lead µSOIC RM-8 *AD8072ARM-REEL –40°C to +85°C 13" Reel 8-Lead µSOIC RM-8 Figure 2. AD8072 Maximum Power Dissipation vs. *AD8072ARM-REEL7 –40°C to +85°C 7" Reel 8-Lead µSOIC RM-8 Temperature AD8072JN 0°C to 70°C 8-Lead Plastic DIP N-8 AD8072JR 0°C to 70°C 8-Lead SOIC SO-8 2.5 AD8072JR-REEL 0°C to 70°C 13" Reel 8-Lead SOIC SO-8 TJ = 150 ⴗ C AD8072JR-REEL7 0°C to 70°C 7" Reel 8-Lead SOIC SO-8 W AD8073JN 0°C to 70°C 14-Lead Plastic DIP N-14 –2.0 AD8073JR 0°C to 70°C 14-Lead Narrow SOIC R-14 AD8073JR-REEL 0°C to 70°C 13" Reel 14-Lead SOIC R-14 14-LEAD DIP PACKAGE AD8073JR-REEL7 0°C to 70°C 7" Reel 14-Lead SOIC R-14 *Brand Code: HLA 1.514-LEAD SOIC1.0MAXIMUM POWER DISSIPATION0.5–50 –40 –30 –20 –10 010 2030 40 5060 7080 90AMBIENT TEMPERATURE – ⴗ C Figure 3. AD8073 Maximum Power Dissipation vs. Temperature CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. WARNING! Although the AD8072/AD8073 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ESD SENSITIVE DEVICE –4– REV. D