Datasheet AD8031, AD8032 (Analog Devices) - 6

制造商Analog Devices
描述2.7 V, 800 μA, 80 MHz Rail-to-Rail I/O Amplifiers
页数 / 页20 / 6 — AD8031/AD8032. Data Sheet. ABSOLUTE MAXIMUM RATINGS. Table 4. MAXIMUM …
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AD8031/AD8032. Data Sheet. ABSOLUTE MAXIMUM RATINGS. Table 4. MAXIMUM POWER DISSIPATION. Parameter. Rating. 2.0. TJ = +150°C. 8-LEAD PDIP

AD8031/AD8032 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 4 MAXIMUM POWER DISSIPATION Parameter Rating 2.0 TJ = +150°C 8-LEAD PDIP

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AD8031/AD8032 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 4. MAXIMUM POWER DISSIPATION Parameter Rating
The maximum power that can be safely dissipated by the Supply Voltage 12.6 V AD8031/AD8032 is limited by the associated rise in junction Internal Power Dissipation1 temperature. The maximum safe junction temperature for 8-Lead PDIP (N) 1.3 W plastic encapsulated devices is determined by the glass 8-Lead SOIC_N (R) 0.8 W transition temperature of the plastic, approximately 150°C. 8-Lead MSOP (RM) 0.6 W Exceeding this limit temporarily can cause a shift in parametric 5-Lead SOT-23 (RJ) 0.5 W performance due to a change in the stresses exerted on the die Input Voltage (Common Mode) ±VS ± 0.5 V by the package. Exceeding a junction temperature of 175°C for Differential Input Voltage ±3.4 V an extended period can result in device failure. Output Short-Circuit Duration Observe Power Derating Curves While the AD8031/AD8032 are internally short-circuit Storage Temperature Range (N, R, RM, RJ) −65°C to +125°C protected, this may not be sufficient to guarantee that the Lead Temperature (Soldering 10 sec) 300°C maximum junction temperature (150°C) is not exceeded under 1 Specification is for the device in free air: all conditions. To ensure proper operation, it is necessary to 8-Lead PDIP: θJA = 90°C/W. observe the maximum power derating curves shown in Figure 7. 8-Lead SOIC_N: θJA = 155°C/W. 8-Lead MSOP: θJA = 200°C/W.
2.0
5-Lead SOT-23: θJA = 240°C/W.
TJ = +150°C 8-LEAD PDIP )
Stresses above those listed under Absolute Maximum Ratings
(W N 1.5
may cause permanent damage to the device. This is a stress
IO T 8-LEAD SOIC
rating only; functional operation of the device at these or any
PA ISSI
other conditions above those indicated in the operational
D 8-LEAD MSOP 1.0
section of this specification is not implied. Exposure to absolute
ER W
maximum rating conditions for extended periods may affect
M PO
device reliability.
MU 0.5 5-LEAD SOT-23 XI MA 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
007
AMBIENT TEMPERATURE (°C)
01056- Figure 7. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. G | Page 6 of 20 Document Outline Features Applications General Description Connection Diagrams Table of Contents Revision History Specifications +2.7 V Supply +5 V Supply ±5 V Supply Absolute Maximum Ratings Maximum Power Dissipation ESD Caution Typical Performance Characteristics Theory of Operation Input Stage Operation Overdriving the Input Stage Output Stage, Open-Loop Gain and Distortion vs. Clearance from Power Supply Output Overdrive Recovery Driving Capacitive Loads Applications A 2 MHz Single-Supply, Biquad Band-Pass Filter High Performance, Single-Supply Line Driver Outline Dimensions Ordering Guide