Datasheet AD8047, AD8048 (Analog Devices) - 3

AD8047/AD8048 ABSOLUTE MAXIMUM RATINGS1 MAXIMUM POWER DISSIPATION
Supply Voltage, (+VS) – (–VS) . 12.6 V The maximum power that can be safely dissipated by these devices Voltage Swing × Bandwidth Product is limited by the associated rise in junction temperature. The AD8047 . 180 V-MHz maximum safe junction temperature for plastic encapsulated AD8048 . 250 V-MHz devices is determined by the glass transition temperature of the Internal Power Dissipation2 plastic, approximately 150°C. Exceeding this limit temporarily Plastic Package (N) . 1.3 W may cause a shift in parametric performance due to a change in Small Outline Package (R) . 0.9 W the stresses exerted on the die by the package. Exceeding a Input Voltage (Common Mode) . ± VS junction temperature of 175°C for an extended period can Differential Input Voltage . ± 1.2 V result in device failure. Output Short-Circuit Duration . While the AD8047 and AD8048 are internally short circuit . Observe Power Derating Curves protected, this may not be sufficient to guarantee that the maxi- Storage Temperature Range (N, R) . –65°C to +125°C mum junction temperature (150°C) is not exceeded under all Operating Temperature Range (A Grade) . –40°C to +85°C conditions. To ensure proper operation, it is necessary to observe Lead Temperature Range (Soldering 10 sec) . 300°C the maximum power derating curves. NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
2.0
nent damage to the device. This is a stress rating only; functional operation of the
T J = +150 C 8-PIN PDIP PACKAGE
device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
1.5
2 Specification is for device in free air: 8-Lead PDIP Package, ␪JA = 90°C/W; 8-Lead SOIC Package, ␪JA = 140°C/W
METALLIZATION PHOTOS 1.0
Dimensions shown in inches and (mm) Connect Substrate to –VS.
AD8047 8-PIN SOIC PACKAGE 0.5 +VS MAXIMUM POWER DISSIPATION (W) 0 –50 8 –40 –20 –10 0 10 –30 20 30 40 50 60 70 0 90 AMBIENT TEMPERATURE ( C) 0.045 (1.14) VOUT
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
–IN ORDERING GUIDE –V +IN S 0.044 Temperature Package Package (1.13) Model Range Description Option* AD8048
AD8047AN –40°C to +85°C PDIP N-8
+VS
AD8047AR –40°C to +85°C SOIC R-8 AD8047AR-REEL –40°C to +85°C SOIC R-8 AD8047AR-REEL7 –40°C to +85°C SOIC R-8 AD8048AN –40°C to +85°C PDIP N-8 AD8048AR –40°C to +85°C SOIC R-8
0.045 (1.14)
AD8048AR-REEL –40°C to +85°C SOIC R-8
VOUT
AD8048AR-REEL7 –40°C to +85°C SOIC R-8 *N = PDIP, R= SOIC
–IN –V +IN S 0.044 (1.13) CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8047/AD8048 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. A –3– Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM PRODUCT DESCRIPTION SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS METALLIZATION PHOTOS MAXIMUM POWER DISSIPATION ORDERING GUIDE Typical Performance Characteristics THEORY OF OPERATION General Feedback Resistor Choice Pulse Response Large Signal Performance Power Supply Bypassing Driving Capacitive Loads APPLICATIONS Operation as a Video Line Driver Active Filters A/D Converter Driver Layout Considerations OUTLINE DIMENSIONS Revision History