Datasheet LTC1410 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 12-Bit, 1.25Msps, Sampling A/D Converter with Shutdown |
| 页数 / 页 | 16 / 3 — DY A IC ACCURACY The. denotes specifications which apply over the full … |
| 文件格式/大小 | PDF / 162 Kb |
| 文件语言 | 英语 |
DY A IC ACCURACY The. denotes specifications which apply over the full operating temperature range,
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文件文字版本
LTC1410
U W DY A IC ACCURACY The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/(N + D) Signal-to-(Noise + Distortion) Ratio 100kHz Input Signal (Note 12) ● 70 72.5 dB 600kHz Input Signal (Note 12) ● 68 71.0 dB THD Total Harmonic Distortion 100kHz Input Signal, First 5 Harmonics – 85 dB 600kHz Input Signal, First 5 Harmonics ● – 82 – 74 dB Peak Harmonic or Spurious Noise 600kHz Input Signal ● – 84 – 74 dB IMD Intermodulation Distortion fIN1 = 29.37kHz, fIN2 = 32.446kHz – 84 dB Full Power Bandwidth 20 MHz Full Linear Bandwidth (S/(N + D) ≥ 68dB) 2.5 MHz
U U U I TER AL REFERE CE CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.480 2.500 2.520 V VREF Output Tempco IOUT = 0 ±15 ppm/°C VREF Line Regulation 4.75V ≤ VDD ≤ 5.25V 0.01 LSB/V – 5.25V ≤ VSS ≤ – 4.75V 0.01 LSB/V VREF Output Resistance IOUT ≤ 0.1mA 2 kΩ COMP Output Voltage IOUT = 0 4.06 V
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.75V IO = – 10µA 4.5 V IO = – 200µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.75V IO = 160µA 0.05 V IO = 1.6mA ● 0.10 0.4 V IOZ High-Z Output Leakage D11 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ High-Z Output Capacitance D11 to D0 CS High (Note 9 ) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 10 mA ISINK Output Sink Current VOUT = VDD 10 mA
W U POWER REQUIRE E TS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Positive Supply Voltage (Notes 10, 11) 4.75 5.25 V VSS Negative Supply Voltage (Note 10) – 4.75 – 5.25 V IDD Positive Supply Current CS = RD = CONVST = 5V ● 12 16 mA Nap Mode SHDN = 0V, NAP/SLP = 5V 1.5 2.3 mA Sleep Mode SHDN = 0V, NAP/SLP = 0V 1 100 µA ISS Negative Supply Current CS = RD = CONVST = 5V ● 20 30 mA Nap Mode SHDN = 0V, NAP/SLP = 5V 10 200 µA Sleep Mode SHDN = 0V, NAP/SLP = 0V 1 100 µA 3
U W DY A IC ACCURACY The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/(N + D) Signal-to-(Noise + Distortion) Ratio 100kHz Input Signal (Note 12) ● 70 72.5 dB 600kHz Input Signal (Note 12) ● 68 71.0 dB THD Total Harmonic Distortion 100kHz Input Signal, First 5 Harmonics – 85 dB 600kHz Input Signal, First 5 Harmonics ● – 82 – 74 dB Peak Harmonic or Spurious Noise 600kHz Input Signal ● – 84 – 74 dB IMD Intermodulation Distortion fIN1 = 29.37kHz, fIN2 = 32.446kHz – 84 dB Full Power Bandwidth 20 MHz Full Linear Bandwidth (S/(N + D) ≥ 68dB) 2.5 MHz
U U U I TER AL REFERE CE CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.480 2.500 2.520 V VREF Output Tempco IOUT = 0 ±15 ppm/°C VREF Line Regulation 4.75V ≤ VDD ≤ 5.25V 0.01 LSB/V – 5.25V ≤ VSS ≤ – 4.75V 0.01 LSB/V VREF Output Resistance IOUT ≤ 0.1mA 2 kΩ COMP Output Voltage IOUT = 0 4.06 V
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.75V IO = – 10µA 4.5 V IO = – 200µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.75V IO = 160µA 0.05 V IO = 1.6mA ● 0.10 0.4 V IOZ High-Z Output Leakage D11 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ High-Z Output Capacitance D11 to D0 CS High (Note 9 ) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 10 mA ISINK Output Sink Current VOUT = VDD 10 mA
W U POWER REQUIRE E TS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Positive Supply Voltage (Notes 10, 11) 4.75 5.25 V VSS Negative Supply Voltage (Note 10) – 4.75 – 5.25 V IDD Positive Supply Current CS = RD = CONVST = 5V ● 12 16 mA Nap Mode SHDN = 0V, NAP/SLP = 5V 1.5 2.3 mA Sleep Mode SHDN = 0V, NAP/SLP = 0V 1 100 µA ISS Negative Supply Current CS = RD = CONVST = 5V ● 20 30 mA Nap Mode SHDN = 0V, NAP/SLP = 5V 10 200 µA Sleep Mode SHDN = 0V, NAP/SLP = 0V 1 100 µA 3