Datasheet LTC1416 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Power 14-Bit, 400ksps Sampling ADC |
| 页数 / 页 | 20 / 3 — DY A IC ACCURACY The. denotes specifications which apply over the full … |
| 文件格式/大小 | PDF / 338 Kb |
| 文件语言 | 英语 |
DY A IC ACCURACY The. denotes specifications which apply over the full operating temperature range,
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文件文字版本
LTC1416
U W DY A IC ACCURACY The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/(N + D) Signal-to-(Noise + Distortion) Ratio 100kHz Input Signal ● 77 80.5 dB 200kHz Input Signal 80 dB THD Total Harmonic Distortion 100kHz Input Signal, First 5 Harmonics ● – 93 – 86 dB 200kHz Input Signal, First 5 Harmonics – 90 dB SFDR Spurious-Free Dynamic Range 100kHz Input Signal ● – 95 – 86 dB IMD Intermodulation Distortion fIN1 = 87.01172kHz, fIN2 = 113.18359kHz – 90 dB Full Power Bandwidth 15 MHz Full Linear Bandwidth S/(N + D) ≥ 77dB 0.8 MHz
U U U I TER AL REFERE CE CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.480 2.500 2.520 V VREF Output Tempco IOUT = 0 ±15 ppm/°C VREF Line Regulation 4.75V ≤ VDD ≤ 5.25V 0.05 LSB/V – 5.25V ≤ VSS ≤ – 4.75V 0.05 LSB/V VREF Output Resistance – 0.1mA ≤ IOUT ≤ 0.1mA 4 kΩ COMP Output Voltage IOUT = 0 4.06 V
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.75V IOUT = – 10µA 4.5 V IOUT = – 200µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.75V IOUT = 160µA 0.05 V IOUT = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D13 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ Hi-Z Output Capacitance D13 to D0 CS High (Note 9 ) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 10 mA ISINK Output Sink Current VOUT = VDD 10 mA
W U POWER REQUIRE E TS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Positive Supply Voltage (Note 10) 4.75 5.25 V VSS Negative Supply Voltage (Note 10) – 4.75 – 5.25 V IDD Positive Supply Current ● 7 10 mA Nap Mode SHDN = 0V, CS = 0V 1 1.6 mA Sleep Mode SHDN = 0V, CS = 5V 1 µA 3
U W DY A IC ACCURACY The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/(N + D) Signal-to-(Noise + Distortion) Ratio 100kHz Input Signal ● 77 80.5 dB 200kHz Input Signal 80 dB THD Total Harmonic Distortion 100kHz Input Signal, First 5 Harmonics ● – 93 – 86 dB 200kHz Input Signal, First 5 Harmonics – 90 dB SFDR Spurious-Free Dynamic Range 100kHz Input Signal ● – 95 – 86 dB IMD Intermodulation Distortion fIN1 = 87.01172kHz, fIN2 = 113.18359kHz – 90 dB Full Power Bandwidth 15 MHz Full Linear Bandwidth S/(N + D) ≥ 77dB 0.8 MHz
U U U I TER AL REFERE CE CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.480 2.500 2.520 V VREF Output Tempco IOUT = 0 ±15 ppm/°C VREF Line Regulation 4.75V ≤ VDD ≤ 5.25V 0.05 LSB/V – 5.25V ≤ VSS ≤ – 4.75V 0.05 LSB/V VREF Output Resistance – 0.1mA ≤ IOUT ≤ 0.1mA 4 kΩ COMP Output Voltage IOUT = 0 4.06 V
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.75V IOUT = – 10µA 4.5 V IOUT = – 200µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.75V IOUT = 160µA 0.05 V IOUT = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D13 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ Hi-Z Output Capacitance D13 to D0 CS High (Note 9 ) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 10 mA ISINK Output Sink Current VOUT = VDD 10 mA
W U POWER REQUIRE E TS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Positive Supply Voltage (Note 10) 4.75 5.25 V VSS Negative Supply Voltage (Note 10) – 4.75 – 5.25 V IDD Positive Supply Current ● 7 10 mA Nap Mode SHDN = 0V, CS = 0V 1 1.6 mA Sleep Mode SHDN = 0V, CS = 5V 1 µA 3