Datasheet LTC1608 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown |
| 页数 / 页 | 20 / 3 — DY A IC ACCURACY TA = 25. C (Note 5). SYMBOL. PARAMETER. CONDITIONS. MIN. … |
| 文件格式/大小 | PDF / 816 Kb |
| 文件语言 | 英语 |
DY A IC ACCURACY TA = 25. C (Note 5). SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNITS. I TER AL REFERE CE CHARACTERISTICS TA = 25
该数据表的模型线
文件文字版本
LTC1608
U W DY A IC ACCURACY TA = 25
°
C (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/N Signal-to-Noise Ratio 5kHz Input Signal 90 dB 100kHz Input Signal 88 dB S/(N + D) Signal-to-(Noise + Distortion) Ratio 5kHz Input Signal 90 dB 100kHz Input Signal (Note 10) 84 dB THD Total Harmonic Distortion 5kHz Input Signal – 100 dB Up to 5th Harmonic 100kHz Input Signal – 91 dB SFDR Spurious Free Dynamic Range 100kHz Input Signal 94 dB IMD Intermodulation Distortion fIN1 = 29.37kHz, fIN2 = 32.446kHz – 88 dB Full Power Bandwidth 5 MHz Full Linear Bandwidth (S/(N + D) ≥ 84dB) 350 kHz
U U U I TER AL REFERE CE CHARACTERISTICS TA = 25
°
C (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.475 2.500 2.515 V VREF Output Tempco IOUT = 0 ±15 ppm/°C VREF Line Regulation 4.75 ≤ VDD ≤ 5.25V 0.01 LSB/V – 5.25V ≤ VSS ≤ – 4.75V 0.01 LSB/V VREF Output Resistance 0 ≤ IOUT ≤ 1mA 7.5 kΩ REFCOMP Output Voltage IOUT = 0 4.375 V
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes specifications that apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.75V, IOUT = – 10µA 4.5 V VDD = 4.75V, IOUT = – 400µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.75V, IOUT = 160µA 0.05 V VDD = 4.75V, IOUT = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D15 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ Hi-Z Output Capacitance D15 to D0 CS High (Note 11) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 1 0 mA ISINK Output Sink Current VOUT = VDD 10 mA 3
U W DY A IC ACCURACY TA = 25
°
C (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/N Signal-to-Noise Ratio 5kHz Input Signal 90 dB 100kHz Input Signal 88 dB S/(N + D) Signal-to-(Noise + Distortion) Ratio 5kHz Input Signal 90 dB 100kHz Input Signal (Note 10) 84 dB THD Total Harmonic Distortion 5kHz Input Signal – 100 dB Up to 5th Harmonic 100kHz Input Signal – 91 dB SFDR Spurious Free Dynamic Range 100kHz Input Signal 94 dB IMD Intermodulation Distortion fIN1 = 29.37kHz, fIN2 = 32.446kHz – 88 dB Full Power Bandwidth 5 MHz Full Linear Bandwidth (S/(N + D) ≥ 84dB) 350 kHz
U U U I TER AL REFERE CE CHARACTERISTICS TA = 25
°
C (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.475 2.500 2.515 V VREF Output Tempco IOUT = 0 ±15 ppm/°C VREF Line Regulation 4.75 ≤ VDD ≤ 5.25V 0.01 LSB/V – 5.25V ≤ VSS ≤ – 4.75V 0.01 LSB/V VREF Output Resistance 0 ≤ IOUT ≤ 1mA 7.5 kΩ REFCOMP Output Voltage IOUT = 0 4.375 V
U U DIGITAL I PUTS A D DIGITAL OUTPUTS The
●
denotes specifications that apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.75V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.75V, IOUT = – 10µA 4.5 V VDD = 4.75V, IOUT = – 400µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.75V, IOUT = 160µA 0.05 V VDD = 4.75V, IOUT = 1.6mA ● 0.10 0.4 V IOZ Hi-Z Output Leakage D15 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ Hi-Z Output Capacitance D15 to D0 CS High (Note 11) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 1 0 mA ISINK Output Sink Current VOUT = VDD 10 mA 3