Datasheet LT3150 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Fast Transient Response, Low Input Voltage, Very Low Dropout Linear Regulator Controller |
| 页数 / 页 | 20 / 3 — ELECTRICAL CHARACTERISTICS. The |
| 文件格式/大小 | PDF / 265 Kb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS. The
该数据表的模型线
文件文字版本
LT3150
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VIN1 = 1.5V, VSHDN1 = VIN1, VIN2 = 12V, GATE = 6V, IPOS = INEG = 5V, VSHDN2 = 0.75V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
AVOL Large-Signal Voltage Gain VGATE = 3V to 10V ● 69 84 dB VOL GATE Output Swing Low (Note 4) IGATE = 0mA ● 2.5 3 V VOH GATE Output Swing High IGATE = 0mA ● VIN2 – 1.6 VIN2 – 1 V IPOS + INEG Supply Current 3V ≤ IPOS ≤ 20V ● 0.3 0.625 1 mA Current Limit Threshold Voltage 42 50 58 mV ● 37 50 63 mV Current Limit Threshold Voltage 3V ≤ IPOS ≤ 20V ● – 0.20 – 0.50 %/V Line Regulation SHDN2 Sink Current Current Flows Into Pin ● 2.5 5.0 8.0 µA SHDN2 Source Current Current Flows Out of Pin ● – 8 – 15 – 23 µA SHDN2 Low Clamp Voltage ● 0.1 0.25 V SHDN2 High Clamp Voltage ● 1.50 1.85 2.20 V SHDN2 Threshold Voltage ● 1.18 1.21 1.240 V SHDN2 Threshold Hysteresis ● 50 100 150 mV
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 3:
Switch current limit is guaranteed by design and/or correlation to of the device may be impaired. static test.
Note 2:
TJ is calculated from the ambient temperature TA and power
Note 4:
The VGS(th) of the external MOSFET must be greater than dissipation PD according to the following formula: 3V – VOUT. TJ = TA + (PD • 130°C/W) 3150f 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VIN1 = 1.5V, VSHDN1 = VIN1, VIN2 = 12V, GATE = 6V, IPOS = INEG = 5V, VSHDN2 = 0.75V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
AVOL Large-Signal Voltage Gain VGATE = 3V to 10V ● 69 84 dB VOL GATE Output Swing Low (Note 4) IGATE = 0mA ● 2.5 3 V VOH GATE Output Swing High IGATE = 0mA ● VIN2 – 1.6 VIN2 – 1 V IPOS + INEG Supply Current 3V ≤ IPOS ≤ 20V ● 0.3 0.625 1 mA Current Limit Threshold Voltage 42 50 58 mV ● 37 50 63 mV Current Limit Threshold Voltage 3V ≤ IPOS ≤ 20V ● – 0.20 – 0.50 %/V Line Regulation SHDN2 Sink Current Current Flows Into Pin ● 2.5 5.0 8.0 µA SHDN2 Source Current Current Flows Out of Pin ● – 8 – 15 – 23 µA SHDN2 Low Clamp Voltage ● 0.1 0.25 V SHDN2 High Clamp Voltage ● 1.50 1.85 2.20 V SHDN2 Threshold Voltage ● 1.18 1.21 1.240 V SHDN2 Threshold Hysteresis ● 50 100 150 mV
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 3:
Switch current limit is guaranteed by design and/or correlation to of the device may be impaired. static test.
Note 2:
TJ is calculated from the ambient temperature TA and power
Note 4:
The VGS(th) of the external MOSFET must be greater than dissipation PD according to the following formula: 3V – VOUT. TJ = TA + (PD • 130°C/W) 3150f 3