Datasheet AD7892 (Analog Devices) - 4

AD7892 Parameter A Versions1 B Versions S Version2 Unit Test Conditions/Comments
LOGIC OUTPUTS Output High Voltage, VOH 4.0 4.0 4.0 V min ISOURCE = 200 µA Output Low Voltage, VOL 0.4 0.4 0.4 V max ISINK = 1.6 mA DB11–DB0 Floating-State Leakage Current ±10 ±10 ±10 µA max Floating-State Capacitance4 15 15 15 pF max Output Coding AD7892-1 and AD7892-3 Two’s Complement AD7892-2 Straight (Natural) Binary CONVERSION RATE Conversion Time 1.47 1.47 µs max AD7892-3 Track/Hold Acquisition Time3 0.2 0.2 µs max AD7892-3 Conversion Time 1.6 1.6 1.68 µs max AD7892-1 and AD7892-2 Track/Hold Acquisition Time3 0.4 0.4 0.32 µs max AD7892-1 and AD7892-2 POWER REQUIREMENTS VDD +5 +5 +5 V nom ±5% for Specified Performance I 5 DD Normal Operation 18 18 19 mA max Standby Mode6 AD7892-2 250 250 µA typ AD7892-3, AD7892-1 80 80 100 µA max typ 15 µA Power Dissipation5 Normal Operation 90 90 95 mW max VDD = +5 V. Typically 60 mW Standby Mode6 AD7892-2 1.25 1.25 mW typ AD7892-3, AD7892-1 400 400 500 µW max VDD = +5 V. Typically 75 µW NOTES 1Temperature ranges are as follows: A, B Versions: –40°C to +85°C; S Version: –55°C to +125°C. 2S Version available on AD7892-1 and AD7892-2 only. 3See Terminology. 4Sample tested @ +25°C to ensure compliance. 5These normal mode and standby mode currents are achieved with resistors (in the range 10 kΩ to 100 kΩ) to either DGND or VDD on Pins 8, 9, 16 and 17. 6A conversion should not be initiated on the part within 30 µs of exiting standby mode. Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
Junction Temperature . +150°C (TA = +25°C unless otherwise noted) Plastic DIP Package, Power Dissipation . 450 mW V θJA Thermal Impedance . 105°C/W DD to AGND . –0.3 V to +7 V V Lead Temperature (Soldering, 10 sec) . +260°C DD to DGND . –0.3 V to +7 V Analog Input Voltage to AGND Cerdip Package, Power Dissipation . 450 mW AD7892-1 . ± 17 V θJA Thermal Impedance . 70°C/W AD7892-2 . –0.3 V, V Lead Temperature (Soldering, 10 sec) . +300°C DD AD7892-3 . ± 7 V SOIC Package, Power Dissipation . 450 mW Reference Input Voltage to AGND . –0.3 V to V θJA Thermal Impedance . 75°C/W DD + 0.3 V Digital Input Voltage to DGND . –0.3 V to V Lead Temperature, Soldering DD + 0.3 V Digital Output Voltage to DGND . –0.3 V to V Vapor Phase (60 sec) . +215°C DD + 0.3 V Operating Temperature Range Infrared (15 sec) . +220°C Commercial (A, B Versions) . –40°C to +85°C *Stresses above those listed under Absolute Maximum Ratings may cause perma- Extended (S Version) . –55°C to +125°C nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational Storage Temperature Range . –65°C to +150°C sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. REV. C –3–