Datasheet AD8421-EP (Analog Devices) - 3

制造商Analog Devices
描述3 nV /√Hz, Low Power Instrumentation Amplifier
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Enhanced Product. AD8421-EP. SPECIFICATIONS. Table 1. Parameter. Test Conditions/ Comments. Min. Typ. Max. Unit

Enhanced Product AD8421-EP SPECIFICATIONS Table 1 Parameter Test Conditions/ Comments Min Typ Max Unit

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Enhanced Product AD8421-EP SPECIFICATIONS
VS = ±15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 1. Parameter Test Conditions/ Comments Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR) CMRR DC to 60 Hz with 1 kΩ Source Imbalance VCM = −10 V to +10 V G = 1 84 dB G = 10 104 dB G = 100 124 dB G = 1000 134 dB Over Temperature, G = 1 TA = −55°C to +125°C 80 dB CMRR at 20 kHz VCM = −10 V to +10 V G = 1 80 dB G = 10 90 dB G = 100 100 dB G = 1000 100 dB NOISE Voltage Noise, 1 kHz1 VIN+, VIN− = 0 V Input Voltage Noise, eni 3 3.2 nV/√Hz Output Voltage Noise, eno 60 nV/√Hz Peak to Peak, RTI f = 0.1 Hz to 10 Hz G = 1 2 µV p-p G = 10 0.5 µV p-p G = 100 to 1000 0.07 µV p-p Current Noise Spectral Density f = 1 kHz 200 fA/√Hz Peak to Peak, RTI f = 0.1 Hz to 10 Hz 18 pA p-p VOLTAGE OFFSET2 Input Offset Voltage, VOSI VS = ±5 V to ±15 V 70 µV Over Temperature TA = −55°C to +125°C 160 µV Average TC 0.9 µV/°C Output Offset Voltage, VOSO 600 µV Over Temperature TA = −55°C to +125°C 1.5 mV Average TC 9 µV/°C Offset RTI vs. Supply (PSR) VS = ±2.5 V to ±18 V G = 1 90 120 dB G = 10 110 120 dB G = 100 124 130 dB G = 1000 130 140 dB INPUT CURRENT Input Bias Current 1 2 nA Over Temperature TA = −55°C to +125°C 8 nA Average TC 50 pA/°C Input Offset Current 0.5 2 nA Over Temperature TA = −55°C to +125°C 3 nA Average TC 1 pA/°C Rev. 0 | Page 3 of 20 Document Outline Features Enhanced Product Features Pin Connection Diagram General Description Revision History Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Outline Dimensions Ordering Guide