Datasheet AD8229-KGD (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 1 nV/√Hz Low Noise 210°C Instrumentation Amplifier |
| 页数 / 页 | 8 / 3 — Known Good Die. AD8229-KGD. SPECIFICATIONS. Table 1. Parameter. Test … |
| 文件格式/大小 | PDF / 148 Kb |
| 文件语言 | 英语 |
Known Good Die. AD8229-KGD. SPECIFICATIONS. Table 1. Parameter. Test Conditions/Comments. Min. Typ. Max. Unit
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Known Good Die AD8229-KGD SPECIFICATIONS
+VS = 15 V, −VS = −15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR) CMRR DC to 60 Hz with V = ±10 V CM 1 kΩ Source Imbalance G = 1 86 dB Temperature Drift T = −40°C to +210°C 300 nV/V/°C A G = 10 106 dB Temperature Drift T = −40°C to +210°C 30 nV/V/°C A G = 100 126 dB Temperature Drift T = −40°C to +210°C 3 nV/V/°C A G = 1000 T = −40°C to +210°C 134 dB A CMRR at 5 kHz V = ±10 V CM G = 1 80 dB G = 10 90 dB G = 100 90 dB G = 1000 90 dB VOLTAGE NOISE V +, V − = 0 V IN IN Spectral Density1: 1 kHz Input Voltage Noise, e 1 1.1 nV/√Hz ni Output Voltage Noise, e 45 50 nV/√Hz no Peak to Peak: 0.1 Hz to 10 Hz G = 1 2 µV p-p G = 1000 100 nV p-p CURRENT NOISE Spectral Density: 1 kHz 1.5 pA/√Hz Peak to Peak: 0.1 Hz to 10 Hz 100 pA p-p VOLTAGE OFFSET V = V + V /G OS OSI OSO Input Offset, V 100 µV OSI Average TC −40°C to +210°C 0.1 1 µV/°C Output Offset, V 1000 µV OSO Average TC −40°C to +210°C 3 10 µV/°C Offset RTI vs. Supply (PSR) V = ±5 V to ±15 V S G = 1 −40°C to +210°C 86 dB G = 10 −40°C to +210°C 106 dB G = 100 −40°C to +210°C 126 dB G = 1000 −40°C to +210°C 130 dB INPUT CURRENT Input Bias Current 70 nA High Temperature T = 210°C 200 nA A Input Offset Current 35 nA High Temperature T = 210°C 50 nA A Rev. 0 | Page 3 of 8 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
Known Good Die AD8229-KGD SPECIFICATIONS
+VS = 15 V, −VS = −15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR) CMRR DC to 60 Hz with V = ±10 V CM 1 kΩ Source Imbalance G = 1 86 dB Temperature Drift T = −40°C to +210°C 300 nV/V/°C A G = 10 106 dB Temperature Drift T = −40°C to +210°C 30 nV/V/°C A G = 100 126 dB Temperature Drift T = −40°C to +210°C 3 nV/V/°C A G = 1000 T = −40°C to +210°C 134 dB A CMRR at 5 kHz V = ±10 V CM G = 1 80 dB G = 10 90 dB G = 100 90 dB G = 1000 90 dB VOLTAGE NOISE V +, V − = 0 V IN IN Spectral Density1: 1 kHz Input Voltage Noise, e 1 1.1 nV/√Hz ni Output Voltage Noise, e 45 50 nV/√Hz no Peak to Peak: 0.1 Hz to 10 Hz G = 1 2 µV p-p G = 1000 100 nV p-p CURRENT NOISE Spectral Density: 1 kHz 1.5 pA/√Hz Peak to Peak: 0.1 Hz to 10 Hz 100 pA p-p VOLTAGE OFFSET V = V + V /G OS OSI OSO Input Offset, V 100 µV OSI Average TC −40°C to +210°C 0.1 1 µV/°C Output Offset, V 1000 µV OSO Average TC −40°C to +210°C 3 10 µV/°C Offset RTI vs. Supply (PSR) V = ±5 V to ±15 V S G = 1 −40°C to +210°C 86 dB G = 10 −40°C to +210°C 106 dB G = 100 −40°C to +210°C 126 dB G = 1000 −40°C to +210°C 130 dB INPUT CURRENT Input Bias Current 70 nA High Temperature T = 210°C 200 nA A Input Offset Current 35 nA High Temperature T = 210°C 50 nA A Rev. 0 | Page 3 of 8 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide