Datasheet ADA4897-1-EP, ADA4897-2-EP (Analog Devices) - 8

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ADA4897-1-EP/ADA4897-2-EP Enhanced Product ABSOLUTE MAXIMUM RATINGS Table 6.
The quiescent power dissipation is the voltage between the supply pins (±V
Parameter Rating
S) multiplied by the quiescent current (IS). Supply Voltage 11 V PD = Quiescent Power + (Total Drive Power − Load Power) Power Dissipation See Figure 3  V V  V 2 Common-Mode Input Voltage −V P  V  I    D  S S S OUT OUT S − 0.7 V to +VS + 0.7 V   2 R R Differential Input Voltage    0.7 V L L Storage Temperature Range −65°C to +125°C RMS output voltages should be considered. If RL is referenced to Operating Temperature Range −55°C to +125°C −VS, as in single-supply operation, the total drive power is VS × Lead Temperature (Soldering 10 sec) 300°C IOUT. If the rms signal levels are indeterminate, consider the worst Junction Temperature 150°C case, when VOUT = VS/4 for RL to midsupply. 2 Stresses above those listed under Absolute Maximum Ratings V / 4 P  V  I  D  S    S S may cause permanent damage to the device. This is a stress RL rating only; functional operation of the device at these or any In single-supply operation with RL referenced to −VS, worst case other conditions above those indicated in the operational is VOUT = VS/2. section of this specification is not implied. Exposure to absolute Airflow increases heat dissipation, effectively reducing θ maximum rating conditions for extended periods may affect JA. Also, more metal directly in contact with the package leads device reliability. and exposed paddle from metal traces, through holes, ground,
THERMAL RESISTANCE
and power planes reduces θJA. θJA is specified for the worst-case conditions, that is, θJA is Figure 3 shows the maximum safe power dissipation in the specified for a device soldered in a circuit board for surface- package vs. the ambient temperature on a JEDEC standard mount packages. Table 7 lists the θJA for the ADA4897-1-EP/ 4-layer board. θJA values are approximations. ADA4897-2-EP.
1.6 Table 7. Thermal Resistance 1.4 ) Package Type θ W JA Unit ( N 1.2
6-Lead Single SOT-23 (ADA4897-1-EP) 150 °C/W
O TI A
10-Lead Dual MSOP (ADA4897-2-EP) 210 °C/W
P 1.0 ISSI ADA4897-1-EP (6-LEAD SOT23) D MAXIMUM POWER DISSIPATION R 0.8 E W
The maximum safe power dissipation for the ADA4897-1-EP/
0.6 M PO ADA4897-2-EP (10-LEAD MSOP)
ADA4897-2-EP is limited by the associated rise in junction
U M 0.4
temperature (T
XI
J) on the die. At approximately 150C, which
A M
is the glass transition temperature, the properties of the plastic
0.2
change. Even temporarily exceeding this temperature limit
0
may change the stresses that the package exerts on the die,
5 5 5 5 5 5 5 5 5 –5 15 25 35 45 55 65 75 85 95 –5 –4 –3 –2 –1 10 11 12
-053 permanently shifting the parametric performance of the
AMBIENT TEMPERATURE (°C)
448 09 ADA4897-1-EP/ADA4897-2-EP. Exceeding a junction temper- Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ature of 175C for an extended period of time can result in
ESD CAUTION
changes in silicon devices, potentially causing degradation or loss of functionality. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the die due to the ADA4897-1-EP/ADA4897-2-EP drive at the output. Rev. 0 | Page 8 of 12 Document Outline Features Enhanced Product Features Applications General Description Functional Block Diagram Revision History Specifications ±5 V Supply +5 V Supply +3 V Supply Absolute Maximum Ratings Thermal Resistance Maximum Power Dissipation ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Outline Dimensions Ordering Guide