Datasheet DN2535 (Microchip) - 4
制造商 | Microchip |
描述 | N-Channel Depletion-Mode Vertical DMOS FETs Features |
页数 / 页 | 6 / 4 — DN2535. Typical Performance Curves. BV Variation with Temperature. DSS. … |
文件格式/大小 | PDF / 772 Kb |
文件语言 | 英语 |
DN2535. Typical Performance Curves. BV Variation with Temperature. DSS. On-Resistance vs. Drain Current
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文件文字版本
DN2535 Typical Performance Curves
(cont.)
BV Variation with Temperature DSS On-Resistance vs. Drain Current
1.10 100 V = -5.0V GS V = 0V GS 1.05 80 ) 1.00 60 (ohms) (normalized 0.95 40 DSS BV R DSS(ON 0.90 20 0.85 0 -50 0 50 100 150 0 80 160 240 320 400 T (OC) I (amperes) D j
V and R Variation with Temperature Transfer Characteristics (th) DS
0.40 2.5 V = 10V T = -55OC DS A 0.32 2.0 25OC R @ I = 120mA DS(ON) D ) 0.24 1.5 125OC (normalized) V @10µA (amperes 0.16 GS(OFF) 1.0 I D V GS(th) 0.08 0.5 0 0 -3 -2 -1 0 1 2 -50 0 50 100 150 VGS (volts) T (OC) j
Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics
200 f = 1MHz CISS V = -10V 15 GS 150 10 ) 100 5 (volts) V = 20V V GS DS C (picofarads 200pF 0 V = 40V 50 DS COSS -5 CRSS 170pF 0 0 10 20 30 40 0 0.4 0.8 1.2 1.6 2.0 V (volts) Q (nanocoulombs) DS G Doc.# DSFP-DN2535
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B062813 4
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