Datasheet DN2540 (Microchip) - 2

DN2540 Product Marking SiDN
L = Lot Number YY = Year Sealed YY = Year Sealed
2 5 4 0 DN2540N5
WW = Week Sealed
LLLLLLLLL
WW = Week Sealed
YYWW Y Y W W
= “Green” Packaging = “Green” Packaging Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or
TO-92 TO-220 DN5DW
W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or
TO-243AA (SOT-89) Thermal Characteristics Package I I Power Dissipation D D I † I (continuous)† (pulsed) @T = 25OC DR DRM C
TO-92 120mA 500mA 1.0W 120mA 500mA TO-220 500mA 500mA 15W 500mA 500mA TO-243AA 170mA 500mA 1.6W
‡
170mA 500mA
Notes:
† I (continuous) is limited by max rated T. D j ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm, T = 25OC. A
Electrical Characteristics
(T = 25OC unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-source breakdown voltage 400 - - V V = -5.0V, I = 100µA DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10µA GS(OFF) DS D ΔV Change in V with temperature - - -4.5 mV/OC V = 25V, I = 10µA GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = ±20V, V = 0V GSS GS DS - - 10 µA V = Max rating, V = -10V DS GS I Drain-to-source leakage current D(OFF) - - 1.0 mA V = 0.8 Max Rating, DS V = -10V, T = 125OC GS A I Saturated drain-to-source current 150 - - mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state = 0V, I = 120mA DS(ON) resistance - 17 25 Ω VGS D ΔR Change in R with temperature - - 1.1 %/OC V = 0V, I = 120mA DS(ON) DS(ON) GS D G Forward transconductance - 325 - mmho V = 10V, I = 100mA FS DS D C Input capacitance - 200 300 ISS V = -10V, GS C Common source output capacitance - 12 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - 1.0 5.0 RSS Doc.# DSFP-DN2540
Supertex inc.
B060313 2
www.supertex.com