Datasheet DN2625 (Microchip)
| 制造商 | Microchip |
| 描述 | N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options |
| 页数 / 页 | 14 / 1 — DN2625. N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual … |
| 文件格式/大小 | PDF / 998 Kb |
| 文件语言 | 英语 |
DN2625. N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options. Features. General Description. Applications
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DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description
• Very Low Gate Threshold Voltage The DN2625 is a low-threshold Depletion-mode • Designed to be Source-driven (normally-on) transistor that utilizes an advanced • Low Switching Losses vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a • Low Effective Output Capacitance device with the power handling capabilities of bipolar • Designed for Inductive Loads transistors as well as the high input impedance and positive temperature coefficient inherent in
Applications
Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free • Medical Ultrasound Beamforming from thermal runaway and thermally induced • Ultrasonic Array-focusing Transmitter secondary breakdown. • Piezoelectric Transducer Waveform Drivers Vertical DMOS Field-Effect Transistors (FETs) are ide- • High-speed Arbitrary Waveform Generator ally suited to a wide range of switching and amplifying • Normally-on Switches applications where high breakdown voltage, high input • Solid-state Relays impedance, low input capacitance and fast switching • Constant Current Sources speeds are desired. • Power Supply Circuits The DN2625DK6-G contains two MOSFETs in an 8-lead, dual-pad DFN package. The DN2625 contains a single MOSFET in a TO-252 D-PAK package.
Package Types TO-252 D-PAK 8-lead DFN (Dual Pad)
(Top view) (Top view)
DRAIN
S1 1 8 D1 D1 G1 2 7 D1 S2 3 6 D2 D2
SOURCE
G2 4 5 D2
GATE
See Table 3-1 and Table 3-2 for pin information. 2017 Microchip Technology Inc. DS20005537B-page 1 Document Outline 1.0 Electrical Characteristics Absolute Maximum Ratings† Temperature Specifications Thermal characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transfer Characteristics. FIGURE 2-3: Saturation Characteristics. FIGURE 2-4: BVDSX Variation with Temperature. FIGURE 2-5: On-resistance vs. Drain Current. FIGURE 2-6: VGS(OFF) and RDS(ON) Variation with Temperature. FIGURE 2-7: Transconductance vs. Drain Current. 3.0 Pin Description TABLE 3-1: TO-252 D-PAK Pin Function Table TABLE 3-2: 8-lead DFN (dual Pad) Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. Product Summary 5.0 Packaging Information 5.1 Package Marking Information
DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description
• Very Low Gate Threshold Voltage The DN2625 is a low-threshold Depletion-mode • Designed to be Source-driven (normally-on) transistor that utilizes an advanced • Low Switching Losses vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a • Low Effective Output Capacitance device with the power handling capabilities of bipolar • Designed for Inductive Loads transistors as well as the high input impedance and positive temperature coefficient inherent in
Applications
Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free • Medical Ultrasound Beamforming from thermal runaway and thermally induced • Ultrasonic Array-focusing Transmitter secondary breakdown. • Piezoelectric Transducer Waveform Drivers Vertical DMOS Field-Effect Transistors (FETs) are ide- • High-speed Arbitrary Waveform Generator ally suited to a wide range of switching and amplifying • Normally-on Switches applications where high breakdown voltage, high input • Solid-state Relays impedance, low input capacitance and fast switching • Constant Current Sources speeds are desired. • Power Supply Circuits The DN2625DK6-G contains two MOSFETs in an 8-lead, dual-pad DFN package. The DN2625 contains a single MOSFET in a TO-252 D-PAK package.
Package Types TO-252 D-PAK 8-lead DFN (Dual Pad)
(Top view) (Top view)
DRAIN
S1 1 8 D1 D1 G1 2 7 D1 S2 3 6 D2 D2
SOURCE
G2 4 5 D2
GATE
See Table 3-1 and Table 3-2 for pin information. 2017 Microchip Technology Inc. DS20005537B-page 1 Document Outline 1.0 Electrical Characteristics Absolute Maximum Ratings† Temperature Specifications Thermal characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transfer Characteristics. FIGURE 2-3: Saturation Characteristics. FIGURE 2-4: BVDSX Variation with Temperature. FIGURE 2-5: On-resistance vs. Drain Current. FIGURE 2-6: VGS(OFF) and RDS(ON) Variation with Temperature. FIGURE 2-7: Transconductance vs. Drain Current. 3.0 Pin Description TABLE 3-1: TO-252 D-PAK Pin Function Table TABLE 3-2: 8-lead DFN (dual Pad) Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. Product Summary 5.0 Packaging Information 5.1 Package Marking Information