Datasheet DN3525 (Microchip)
| 制造商 | Microchip |
| 描述 | N-Channel Depletion-Mode Vertical DMOS FETs |
| 页数 / 页 | 5 / 1 — Supertex inc. DN3525. N-Channel Depletion-Mode. Vertical DMOS FETs. … |
| 修订版 | 06-27-2014 |
| 文件格式/大小 | PDF / 640 Kb |
| 文件语言 | 英语 |
Supertex inc. DN3525. N-Channel Depletion-Mode. Vertical DMOS FETs. Features. General Description. Applications. Ordering Information
文件文字版本
Supertex inc. DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description
► High input impedance The Supertex DN3525 is a low threshold depletion-mode ► Low input capacitance (normally-on) transistor utilizing an advanced vertical ► Fast switching speeds DMOS structure and Supertex’s well-proven silicon-gate ► Low on-resistance manufacturing process. This combination produces a device ► Free from secondary breakdown with the power handling capabilities of bipolar transistors ► Low input and output leakage and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and
Applications
thermally-induced secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Constant current sources high breakdown voltage, high input impedance, low input ► Power supply circuits capacitance, and fast switching speeds are desired. ► Telecom
Ordering Information Product SummaryR I Part Number Package Option Packing BV /BV DS(ON) DSS DSX DGX (max) (min)
DN3525N8-G TO-243AA (SOT-89) 2000/Reel 250mA 6.0Ω 300mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX
SOURCE
Drain-to-gate voltage BV
DRAIN
DGX
GATE
Gate-to-source voltage ±20V
TO-243AA (SOT-89)
Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device
Product Marking
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
DN5CW
W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or
Typical Thermal Resistance TO-243AA (SOT-89) Package θja
TO-243AA (SOT-89) 133OC/W
Note:
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Doc.# DSFP-DN3525
Supertex inc.
C062813
www.supertex.com
► High input impedance The Supertex DN3525 is a low threshold depletion-mode ► Low input capacitance (normally-on) transistor utilizing an advanced vertical ► Fast switching speeds DMOS structure and Supertex’s well-proven silicon-gate ► Low on-resistance manufacturing process. This combination produces a device ► Free from secondary breakdown with the power handling capabilities of bipolar transistors ► Low input and output leakage and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and
Applications
thermally-induced secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Constant current sources high breakdown voltage, high input impedance, low input ► Power supply circuits capacitance, and fast switching speeds are desired. ► Telecom
Ordering Information Product SummaryR I Part Number Package Option Packing BV /BV DS(ON) DSS DSX DGX (max) (min)
DN3525N8-G TO-243AA (SOT-89) 2000/Reel 250mA 6.0Ω 300mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX
SOURCE
Drain-to-gate voltage BV
DRAIN
DGX
GATE
Gate-to-source voltage ±20V
TO-243AA (SOT-89)
Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device
Product Marking
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
DN5CW
W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or
Typical Thermal Resistance TO-243AA (SOT-89) Package θja
TO-243AA (SOT-89) 133OC/W
Note:
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Doc.# DSFP-DN3525
Supertex inc.
C062813
www.supertex.com