Datasheet LND150 (Microchip) - 4

LND150 Typical Performance Curves
(cont.)
BV Variation with Temperature I vs R DSS D SOURCE
1.4 V = -5.0V 1.1 GS I 1.2 D ↓ 25°C LND1 125°C 1.0
)
R 0.8 SOURCE 1.0 0.6
(normalized SDS (milliamps) BV I D
0.4 0.2 0.9 0.0 -50 0 50 100 150 10 100 1K 10K 100K
T (OC) R (Ω) j SOURCE Transfer Characteristics V and R Variation with Temperature GS(OFF) DS
10 1.8 V = 400V DS 2.0 1.6 T = -55°C R @ I = 1.0mA A DS(ON) D
) )
1.6 25°C 1.4 125°C 5 1.2
(normalized (normalized (milliamps)
1.2
I D
0.8
V GS(OFF) R DS(ON)
V @ 100nA GS(OFF) 1.0 0.4 0 0.8 -1 0 1 2 3 -50 0 50 100 150
V (V) GS T (OC) j Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics
10 10 V = -10V GS 8.7pF CISS V = 20V DS 40V 60V 5 5
(V) V GS C (picofarads)
0 COSS CRSS 0 -5 0 10 20 30 40 0 0.1 0.2 0.3
V (V) Q (nanocoulombs) DS C
Doc.# DSFP-LND150
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