Datasheet MCP1700 (Microchip) - 3

制造商Microchip
描述Low Quiescent Current LDO
页数 / 页30 / 3 — MCP1700. 1.0 ELECTRICAL. CHARACTERISTICS † Notice: Stresses above those …
修订版09-15-2016
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MCP1700. 1.0 ELECTRICAL. CHARACTERISTICS † Notice: Stresses above those listed under “Maximum

MCP1700 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum

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MCP1700

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MCP1700
1.0 ELECTRICAL
CHARACTERISTICS † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only, and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability. Absolute Maximum Ratings †
VDD .+6.5V
All inputs and outputs w.r.t (VSS -0.3V) to (VIN + 0.3V)
Peak Output Current . Internally Limited
Storage Temperature .-65°C to +150°C
Maximum Junction Temperature . 150°C
Operating Junction Temperature.-40°C to +125°C
ESD protection on all pins (HBM;MM)  4 kV;  400V DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions Input/Output Characteristics
Input Operating
Voltage VIN 2.3 — 6.0 V Note 1 Input Quiescent
Current Iq — 1.6 4 µA IL = 0 mA, VIN = VR + 1V Maximum Output
Current IOUT_mA 250
200 —
— —
— mA For VR  2.5V
For VR  2.5V Output Short
Circuit Current IOUT_SC — 408 — mA VIN = VR + 1V, VOUT = GND
Current (peak current) measured 10 ms
after short is applied. Output Voltage
Regulation VOUT VR -2.0%
VR -3.0% VR ± 0.4% VR + 2.0%
VR + 3.0% V Note 2 TCVOUT — 50 — ppm/°C Note 3 Line Regulation VOUT/
(VOUTXVIN) -1.0 ±0.75 +1.0 %/V Load Regulation VOUT/VOUT -1.5 ±1.0 +1.5 % Dropout Voltage
VR  2.5V VIN -VOUT — 178 350 mV IL = 250 mA, (Note 1, Note 5) Dropout Voltage
VR  2.5V VIN -VOUT — 150 350 mV IL = 200 mA, (Note 1, Note 5) Output Rise Time TR — 500 — µs 10% VR to 90% VR VIN = 0V to 6V,
RL = 50 resistive VOUT Temperature
Coefficient Note 1:
2:
3:
4:
5:
6: 7: (VR + 1)V  VIN  6V
IL = 0.1 mA to 250 mA for VR  2.5V
IL = 0.1 mA to 200 mA for VR  2.5V
Note 4 The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR + 3.0%  VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
TCVOUT = (VOUT-HIGH -VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.  2005-2016 Microchip Technology Inc. DS20001826D-page 3