Datasheet 1N5711, 1N5712, 5082-2300, 5082-2800, 5082-2900 (Avago Technologies) - 5
| 制造商 | Avago Technologies |
| 描述 | Schottky Barrier Diodes for General Purpose Applications |
| 页数 / 页 | 6 / 5 — Typical Parameters,. 100. 100,000. 150. 10,000. 1000. 1.0. +150. +100. … |
| 文件格式/大小 | PDF / 58 Kb |
| 文件语言 | 英语 |
Typical Parameters,. 100. 100,000. 150. 10,000. 1000. 1.0. +150. +100. +50. TA =. 0.1. +25. - FORWARD CURRENT (mA). - REVERSE CURRENT (nA). I F. I R. –50
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5
Typical Parameters,
continued
100 100,000 100 150 10,000 10 10 100 1000 50 1.0 1.0 +150
°
C +150
°
C 100 25 +100
°
C +100
°
C +50
°
C TA =
°
C 0.1 +50
°
C 0.1 +25
°
C +25
°
C 10 0
°
C - FORWARD CURRENT (mA) - REVERSE CURRENT (nA) - FORWARD CURRENT (mA) I F 0
°
C I R I F –50
°
C –50
°
C 0.01 1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 VF - FORWARD VOLTAGE (V) VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) Figure 10. I-V Curve Showing Typical Figure 11. (5082-2811) Typical Variation Figure 12. I-V Curve Showing Typical Temperature Variation for the 5082-2811 of Reverse Current (IR) vs. Reverse Temperature Variations for 5082-2835 Schottky Diode. Voltage (VR) at Various Temperatures. Schottky Diode. 100,000 11.4 1000 ) 5082-2800, 1N5711 +150
°
C 1.2
Ω
10,000 +125
°
C 1.0 5082-2811 +100
°
C 100 1000 0.8 +75
°
C 5082-2810/2811 5082-2811 IN5712 1N5712 0.6 100 +50
°
C 5082-2835 10 0.4 +25
°
C - CAPACITANCE (pF) T 10 - REVERSE CURRENT (nA) C 0.2 - DYNAMIC RESISTANCE ( I R D 5082-2835 R 1 0 1 0 1 2 3 4 5 6 0 2 4 6 8 10 0 2 4 6 8 10 VR - REVERSE VOLTAGE (V) VR - REVERSE VOLTAGE (V) IF - FORWARD CURRENT (mA) Figure 13. (5082-2835) Typical Variation Figure 14. Typical Capacitance (CT) vs. Figure 15. Typical Dynamic Resistance of Reverse Current (IR) vs. Reverse Reverse Voltage (VR). (RD) vs. Forward Current (IF). Voltage (VR) at Various Temperatures.
Document Outline 1N5711 Features Description/Applications Maximum Ratings Outline 15 Package Characteristics Electrical Specifications Matched Pairs and Quads SPICE Parameters Typical Parameters Diode Package Marking
Typical Parameters,
continued
100 100,000 100 150 10,000 10 10 100 1000 50 1.0 1.0 +150
°
C +150
°
C 100 25 +100
°
C +100
°
C +50
°
C TA =
°
C 0.1 +50
°
C 0.1 +25
°
C +25
°
C 10 0
°
C - FORWARD CURRENT (mA) - REVERSE CURRENT (nA) - FORWARD CURRENT (mA) I F 0
°
C I R I F –50
°
C –50
°
C 0.01 1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 VF - FORWARD VOLTAGE (V) VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) Figure 10. I-V Curve Showing Typical Figure 11. (5082-2811) Typical Variation Figure 12. I-V Curve Showing Typical Temperature Variation for the 5082-2811 of Reverse Current (IR) vs. Reverse Temperature Variations for 5082-2835 Schottky Diode. Voltage (VR) at Various Temperatures. Schottky Diode. 100,000 11.4 1000 ) 5082-2800, 1N5711 +150
°
C 1.2
Ω
10,000 +125
°
C 1.0 5082-2811 +100
°
C 100 1000 0.8 +75
°
C 5082-2810/2811 5082-2811 IN5712 1N5712 0.6 100 +50
°
C 5082-2835 10 0.4 +25
°
C - CAPACITANCE (pF) T 10 - REVERSE CURRENT (nA) C 0.2 - DYNAMIC RESISTANCE ( I R D 5082-2835 R 1 0 1 0 1 2 3 4 5 6 0 2 4 6 8 10 0 2 4 6 8 10 VR - REVERSE VOLTAGE (V) VR - REVERSE VOLTAGE (V) IF - FORWARD CURRENT (mA) Figure 13. (5082-2835) Typical Variation Figure 14. Typical Capacitance (CT) vs. Figure 15. Typical Dynamic Resistance of Reverse Current (IR) vs. Reverse Reverse Voltage (VR). (RD) vs. Forward Current (IF). Voltage (VR) at Various Temperatures.
Document Outline 1N5711 Features Description/Applications Maximum Ratings Outline 15 Package Characteristics Electrical Specifications Matched Pairs and Quads SPICE Parameters Typical Parameters Diode Package Marking