Datasheet E522.80, E522.81, E522.82, E522.83 (Elmos) - 5

link to page 8 link to page 12 Triple 150mA Linear LED Controller E522.80/81/82/83 Production Data - May 5, 2017 3 Recommended Operating Conditions No. Description Condition Symbol Min Typ Max Unit 1 Recommended Operating Voltage Range VVS,OP 5 14 25 V 2 Continous Power Dissipation in Package PV,OP 2.2 W 3 VS Capacitance per E522.8x CVS,OP 220 330 nF 4 Nominal Value of Current-Selection LED Channel Resistor at IR1,2,3 to GND operating 1) RIR,x 9.53 30 kΩ 5 Capacitance at IRx Pin to drive RIR,x CIR,x 100 pF 6 Typical Configured Operating Current per Sum of LEDxA and Channel LEDxB 1) ILED,x 48 120 151 mA 7 Dimming Frequency at either ENA or IRx 2) fPWM 50 200 1000 Hz 8 Minimum High / Low pulse- width in case of PWM Dimming TPULSE,PWM 90 µs 9 Total Capacitance for RUN Bus 3) CRUN 1 nF 10 Capacitance at LEDx Driver Outputs LEDxA and LEDxB CLED,x 6.8 22 nF 11 Inductance at either LEDxA oder LEDxB LLED,x 1 µH 1) If selection interface IR is used with higher resistive values take a reduced accuracy into account. Pay attention to the ‘open’ state detection limit „IIR,OPEN“ for IRx configuration 2) high PWM frequencies need to take into account, that there is an inherent startup delay between rising edge at IRx and current flow, which may influence PWM linearity 3) high capacitance values are possible but lead to additional delay between rising edge at ENA and startup of LEDx Drivers 4 Electrical Characteristics (VVS = 5V to 25V, TJ= -40°C to 150°C and recommended operating range, unless otherwise noted. Typical values are at VVS = 14V and TJ = 25°C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit Supply and Bias Enable threshold at ENA VENA rising VENA,ON 1.14 1.2 1.26 V Disable threshold at ENA VENA falling VENA,OFF 1.0 1.06 1.13 V ENA internal Pulldown Resistor RENA,PD 500 kΩ VS undervoltage Release Threshold VS rising edge VVS,ERR 3.8 4.1 4.4 V VS undervoltage Hysteresis VS falling edge VVS,ERR,HYST 440 mV VVS = 14V VS sleep mode Current VENA = 0V IVS,SLEEP 12.5 28 µA TJ ≤ 125°C VENA > 3V VS current in "Standby Mode" VRUN < 2V No error detected IVS,STBY,NOM 90 140 µA in device 1) Average VS Current in "Single Lamp Mode, VENA > 3V “IR Open” Counting" error detected by IVS,STBY,ERR 100 150 µA device, SLM open 2) all channels regu- Device current consumption lating in saturation, (GND pin current) no error detected IGND,OP 1.4 2.1 mA ILED,x = 120mA Overtemperature Shutdown TJ rising TJ,OT 165 185 °C Overtemperature Recovery Hysteresis*) TJ falling TJ,OT,HYST 20 °C Initial Startup Delay of E552.8x after first Initial delay after Power-Up*) VVS > VVS,ERR tSTART 30 80 µs VENA > VENA,ON *) Not tested in production
Notes on table section Supply and Bias
1) See state diagram in chapter „5.4 State Diagram“ for details 2) Please note, that in case of LED or IR shortcircuit the average input current also depends on the configured current and the re-diagnostic du- tycycle. Example: In case of a single LED short to GND the current at VS in SLM is typ. approx. 100µA plus 64/5900*ILEDx Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0132E.03 5/25