Datasheet LT1158 (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | Half Bridge N-Channel Power MOSFET Driver |
| 页数 / 页 | 22 / 6 — PIN FUNCTIONS. BOOST DR (Pin 1):. V+ (Pin 10):. SENSE– (Pin 11):. V+ (Pin … |
| 文件格式/大小 | PDF / 250 Kb |
| 文件语言 | 英语 |
PIN FUNCTIONS. BOOST DR (Pin 1):. V+ (Pin 10):. SENSE– (Pin 11):. V+ (Pin 2):. BIAS (Pin 3):. SENSE+ (Pin 12):. ENABLE (Pin 4):. FAULT
该数据表的模型线
文件文字版本
LT1158
PIN FUNCTIONS BOOST DR (Pin 1):
Recharges and clamps the bootstrap
V+ (Pin 10):
Bottom side driver supply; must be connected capacitor to 14.5V higher than pin 13 via an external to the same supply as pin 2. diode.
SENSE– (Pin 11):
The fl oating reference for the current
V+ (Pin 2):
Main supply pin; must be closely decoupled limit comparator. Connects to the low side of a current to the ground pin 7. shunt or Kelvin lead of a current-sensing MOSFET. When pin 11 is within 1.2V of V+, current limit is inhibited.
BIAS (Pin 3):
Decouple point for the internal 2.6V bias generator. Pin 3 cannot have any external DC loading.
SENSE+ (Pin 12):
Connects to the high side of the current shunt or sense lead of a current-sensing MOSFET. A built-in
ENABLE (Pin 4):
When left open, the LT1158 operates offset between pins 11 and 12 in conjunction with RSENSE normally. Pulling pin 4 low holds both MOSFETs off re- sets the top MOSFET short-circuit current. gardless of the input state.
FAULT T SOURCE (Pin 13):
Top side driver return; connects to
(Pin 5):
Open collector NPN output which turns MOSFET source and low side of the bootstrap capacitor. on when V12 – V11 exceeds the fault conduction thresh- old.
T GATE FB (Pin 14):
Must connect directly to the top power MOSFET gate. The bottom MOSFET turn-on is inhibited
INPUT (Pin 6):
Taking pin 6 high turns the top MOSFET on until V14 – V13 has discharged to 1.75V. An on-chip charge and bottom MOSFET off; pin 6 low reverses these states. pump also feeds the top gate via pin 14. An input latch captures each low state, ignoring an ensuing high until pin 13 has gone below 2.6V.
T GATE DR (Pin 15):
The high current drive point for the top MOSFET. When a gate resistor is used, it is inserted
B GATE FB (Pin 8):
Must connect directly to the bottom between pin 15 and the gate of the MOSFET. power MOSFET gate. The top MOSFET turn-on is inhibited until pin 8 has discharged to 1.5V. A hold-on current source
BOOST (Pin 16):
Top side driver supply; connects to the also feeds the bottom gate via pin 8. high side of the bootstrap capacitor and to a diode either from supply (V+ < 10V) or from pin 1 (V+ > 10V).
B GATE DR (Pin 9):
The high current drive point for the bottom MOSFET. When a gate resistor is used, it is inserted between pin 9 and the gate of the MOSFET. 1158fb 6
PIN FUNCTIONS BOOST DR (Pin 1):
Recharges and clamps the bootstrap
V+ (Pin 10):
Bottom side driver supply; must be connected capacitor to 14.5V higher than pin 13 via an external to the same supply as pin 2. diode.
SENSE– (Pin 11):
The fl oating reference for the current
V+ (Pin 2):
Main supply pin; must be closely decoupled limit comparator. Connects to the low side of a current to the ground pin 7. shunt or Kelvin lead of a current-sensing MOSFET. When pin 11 is within 1.2V of V+, current limit is inhibited.
BIAS (Pin 3):
Decouple point for the internal 2.6V bias generator. Pin 3 cannot have any external DC loading.
SENSE+ (Pin 12):
Connects to the high side of the current shunt or sense lead of a current-sensing MOSFET. A built-in
ENABLE (Pin 4):
When left open, the LT1158 operates offset between pins 11 and 12 in conjunction with RSENSE normally. Pulling pin 4 low holds both MOSFETs off re- sets the top MOSFET short-circuit current. gardless of the input state.
FAULT T SOURCE (Pin 13):
Top side driver return; connects to
(Pin 5):
Open collector NPN output which turns MOSFET source and low side of the bootstrap capacitor. on when V12 – V11 exceeds the fault conduction thresh- old.
T GATE FB (Pin 14):
Must connect directly to the top power MOSFET gate. The bottom MOSFET turn-on is inhibited
INPUT (Pin 6):
Taking pin 6 high turns the top MOSFET on until V14 – V13 has discharged to 1.75V. An on-chip charge and bottom MOSFET off; pin 6 low reverses these states. pump also feeds the top gate via pin 14. An input latch captures each low state, ignoring an ensuing high until pin 13 has gone below 2.6V.
T GATE DR (Pin 15):
The high current drive point for the top MOSFET. When a gate resistor is used, it is inserted
B GATE FB (Pin 8):
Must connect directly to the bottom between pin 15 and the gate of the MOSFET. power MOSFET gate. The top MOSFET turn-on is inhibited until pin 8 has discharged to 1.5V. A hold-on current source
BOOST (Pin 16):
Top side driver supply; connects to the also feeds the bottom gate via pin 8. high side of the bootstrap capacitor and to a diode either from supply (V+ < 10V) or from pin 1 (V+ > 10V).
B GATE DR (Pin 9):
The high current drive point for the bottom MOSFET. When a gate resistor is used, it is inserted between pin 9 and the gate of the MOSFET. 1158fb 6