LT1160/LT1162 UUUPIN FUNCTIONSLT1160LT1162SV+ (Pin 1): Main Signal Supply. Must be closely decoupled SV+ (Pins 1, 7): Main Signal Supply. Must be closely to the signal ground Pin 5. decoupled to ground Pins 5 and 11. IN TOP (Pin 2): Top Driver Input. Pin 2 is disabled when Pin IN TOP (Pins 2, 8): Top Driver Input. The Input Top is 3 is high. A 3k input resistor followed by a 5V internal disabled when the Input Bottom is high. A 3k input resistor clamp prevents saturation of the input transistors. followed by a 5V internal clamp prevents saturation of the input transistors. IN BOTTOM (Pin 3): Bottom Driver Input. Pin 3 is disabled when Pin 2 is high. A 3k input resistor followed by a 5V IN BOTTOM (Pins 3, 9): Bottom Driver Input. The Input internal clamp prevents saturation of the input transistors. Bottom is disabled when the Input Top is high. A 3k input resistor followed by a 5V internal clamp prevents satura- UV OUT (Pin 4): Undervoltage Output. Open collector NPN tion of the input transistors. output which turns on when V + drops below the undervoltage threshold. UV OUT (Pins 4, 10): Undervoltage Output. Open collector NPN output which turns on when V+ drops below the SGND (Pin 5): Small Signal Ground. Must be routed undervoltage threshold. separately from other grounds to the system ground. GND (Pins 5, 11): Ground Connection. PGND (Pin 6): Bottom Driver Power Ground. Connects to source of bottom N-channel MOSFET. B GATE FB (Pins 6, 12): Bottom Gate Feedback. Must connect directly to the bottom power MOSFET gate. The B GATE FB (Pin 8): Bottom Gate Feedback. Must connect top MOSFET turn-on is inhibited until Bottom Gate Feed- directly to the bottom power MOSFET gate. The top back pins have discharged to below 2.5V. MOSFET turn-on is inhibited until Pin 8 has discharged to below 2.5V. B GATE DR (Pins 13, 19): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate B GATE DR (Pin 9): Bottom Gate Drive. The high current resistor is used it is inserted between the Bottom Gate drive point for the bottom MOSFET. When a gate resistor Drive pin and the gate of the MOSFET. is used it is inserted between Pin 9 and the gate of the MOSFET. PV+ (Pins 14, 20): Bottom Driver Supply. Must be con- nected to the same supply as Pins 1 and 7. PV+ (Pin 10): Bottom Driver Supply. Must be connected to the same supply as Pin 1. T SOURCE (Pins 15, 21): Top Driver Return. Connects to the top MOSFET source and the low side of the bootstrap T SOURCE (Pin 11): Top Driver Return. Connects to the capacitor. top MOSFET source and the low side of the bootstrap capacitor. T GATE FB (Pins 16, 22): Top Gate Feedback. Must connect directly to the top power MOSFET gate. The T GATE FB (Pin 12): Top Gate Feedback. Must connect bottom MOSFET turn-on is inhibited until VTGF – VTSOURCE directly to the top power MOSFET gate. The bottom has discharged to below 2.9V. MOSFET turn-on is inhibited until V12 – V11 has discharged to below 2.9V. T GATE DR (Pins 17, 23): Top Gate Drive. The high current drive point for the top MOSFET. When a gate resistor is T GATE DR (Pin 13): Top Gate Drive. The high current drive used it is inserted between the Top Gate Drive pin and the point for the top MOSFET. When a gate resistor is used it gate of the MOSFET. is inserted between Pin 13 and the gate of the MOSFET. BOOST (Pins 18, 24): Top Driver Supply. Connects to the BOOST (Pin 14): Top Driver Supply. Connects to the high high side of the bootstrap capacitor. side of the bootstrap capacitor. 11602fb 6