Datasheet LT1336 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator |
| 页数 / 页 | 20 / 4 — elecTrical characTerisTics. The. denotes the specifications which apply … |
| 文件格式/大小 | PDF / 268 Kb |
| 文件语言 | 英语 |
elecTrical characTerisTics. The. denotes the specifications which apply over the full operating
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LT1336
elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Test Circuit, V+ = VBOOST = 12V, VTSOURCE = 0V and Pins 1, 16 open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tD3 Top Gate Lockout Delay VINBOTTOM (+) Transition, VINTOP = 2V, l 300 600 ns Measured at VTGATE DR – VTSOURCE (Note 5) Bottom Gate Lockout Delay VINTOP (+) Transition, VINBOTTOM = 2V, l 250 500 ns Measured at VBGATE DR (Note 5) tD4 Top Gate Release Delay VINBOTTOM (–) Transition, VINTOP = 2V, l 250 500 ns Measured at VTGATE DR – VTSOURCE (Note 5) Bottom Gate Release Delay VINTOP (–) Transition, VINBOTTOM = 2V, l 200 400 ns Measured at VBGATE DR (Note 5)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Dynamic supply current is higher due to the gate charge may cause permanent damage to the device. Exposure to any Absolute being delivered at the switching frequency. See Typical Performance Maximum Rating condition for extended periods may affect device Characteristics and Applications Information sections. reliability and lifetime.
Note 4:
Pins 1 and 16 connected to each end of the inductor. Booster is
Note 2:
TJ is calculated from the ambient temperature TA and power free running. dissipation PD according to the following formulas:
Note 5:
See Timing Diagram. Gate rise times are measured from 2V to 10V LT1336CN/LT1336IN: TJ = TA + (PD)(70°C/W) and fall times are measured from 10V to 2V. Delay times are measured LT1336CS/LT1336IS: T from the input transition to when the gate voltage has risen to 2V or J = TA + (PD)(110°C/W) decreased to 10V.
Typical perForMance characTerisTics DC Supply Current DC Supply Current DC Supply Current vs Supply Voltage vs Temperature vs Top Source Voltage
22 18 34 VTSOURCE = 0V V+ = 12V V+= 12V 20 17 VTSOURCE = 0V 31 VINTOP = LOW V 18 BOTH INPUTS 16 28 INBOTTOM = HIGH HIGH OR LOW 15 BOTH INPUTS BOTH INPUTS 16 HIGH OR LOW 25 HIGH OR LOW 14 14 22 13 12 V 19 INTOP = LOW VINTOP = HIGH V 12 INBOTTOM = HIGH VINBOTTOM = LOW VINTOP = HIGH SUPPLY CURRENT (mA) V 10 INTOP = HIGH V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 16 VINBOTTOM = LOW INBOTTOM = LOW 11 8 VINTOP = LOW 10 V 13 INBOTTOM = HIGH 6 9 10 4 6 8 10 12 14 16 18 20 –50 –25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 SUPPLY VOLTAGE (V) TEMPERATURE (C) TOP SOURCE VOLTAGE (V) 1336 G01 1336 G02 1336 G18 1336fa 4 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Functional Diagram Test Circuit Timing Diagram Operation Applications Information Typical Applications Package Description Revision History Typical Application Related Parts
elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Test Circuit, V+ = VBOOST = 12V, VTSOURCE = 0V and Pins 1, 16 open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tD3 Top Gate Lockout Delay VINBOTTOM (+) Transition, VINTOP = 2V, l 300 600 ns Measured at VTGATE DR – VTSOURCE (Note 5) Bottom Gate Lockout Delay VINTOP (+) Transition, VINBOTTOM = 2V, l 250 500 ns Measured at VBGATE DR (Note 5) tD4 Top Gate Release Delay VINBOTTOM (–) Transition, VINTOP = 2V, l 250 500 ns Measured at VTGATE DR – VTSOURCE (Note 5) Bottom Gate Release Delay VINTOP (–) Transition, VINBOTTOM = 2V, l 200 400 ns Measured at VBGATE DR (Note 5)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Dynamic supply current is higher due to the gate charge may cause permanent damage to the device. Exposure to any Absolute being delivered at the switching frequency. See Typical Performance Maximum Rating condition for extended periods may affect device Characteristics and Applications Information sections. reliability and lifetime.
Note 4:
Pins 1 and 16 connected to each end of the inductor. Booster is
Note 2:
TJ is calculated from the ambient temperature TA and power free running. dissipation PD according to the following formulas:
Note 5:
See Timing Diagram. Gate rise times are measured from 2V to 10V LT1336CN/LT1336IN: TJ = TA + (PD)(70°C/W) and fall times are measured from 10V to 2V. Delay times are measured LT1336CS/LT1336IS: T from the input transition to when the gate voltage has risen to 2V or J = TA + (PD)(110°C/W) decreased to 10V.
Typical perForMance characTerisTics DC Supply Current DC Supply Current DC Supply Current vs Supply Voltage vs Temperature vs Top Source Voltage
22 18 34 VTSOURCE = 0V V+ = 12V V+= 12V 20 17 VTSOURCE = 0V 31 VINTOP = LOW V 18 BOTH INPUTS 16 28 INBOTTOM = HIGH HIGH OR LOW 15 BOTH INPUTS BOTH INPUTS 16 HIGH OR LOW 25 HIGH OR LOW 14 14 22 13 12 V 19 INTOP = LOW VINTOP = HIGH V 12 INBOTTOM = HIGH VINBOTTOM = LOW VINTOP = HIGH SUPPLY CURRENT (mA) V 10 INTOP = HIGH V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 16 VINBOTTOM = LOW INBOTTOM = LOW 11 8 VINTOP = LOW 10 V 13 INBOTTOM = HIGH 6 9 10 4 6 8 10 12 14 16 18 20 –50 –25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 SUPPLY VOLTAGE (V) TEMPERATURE (C) TOP SOURCE VOLTAGE (V) 1336 G01 1336 G02 1336 G18 1336fa 4 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Functional Diagram Test Circuit Timing Diagram Operation Applications Information Typical Applications Package Description Revision History Typical Application Related Parts