Datasheet MIC5021 (Microchip) - 3
| 制造商 | Microchip |
| 描述 | High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit |
| 页数 / 页 | 24 / 3 — MIC5021. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings †. … |
| 修订版 | 12-09-2016 |
| 文件格式/大小 | PDF / 1.5 Mb |
| 文件语言 | 英语 |
MIC5021. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings †. Supply Voltage, VDD. +40V
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MIC5021
1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings †
Supply Voltage, VDD. +40V
Input Voltage, VIN . –0.5V to +15V
Sense Differential Voltage.±6.5V
SENSE+ or SENSE– to GND . –0.5V to +36V
Timer Voltage . +5.5V
VBOOST Capacitor . 0.01 μF Operating Ratings
Supply Voltage, VDD. +12V to +36V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability. DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,
Gate CL = 1500 pF (IRF540 MOSFET).
Parameters Sym. Min. Typ. Max. — — 1.8 4 — — 2.5 6 — — 1.7 4 — — 2.5 6 Input Threshold — 0.8 1.4 2.0 V — Input Hysteresis — — 0.1 — V — Input Pull-Down Current — 10 20 40 μA Input = 5V Current-Limit Threshold — 30 50 70 mV Note 1 — 16 18 21 — 46 50 52 Gate On-Time (Fixed) tG(ON) 2 6 10 μs Sense Differential 70 mV
(Note 8) Gate Off-Time (Adjustable) tG(OFF) 10 20 50 μs Sense Differential 70 mV,
CT = 0 pF (Note 8) tDLH — 500 1000 ns Note 3 tR — 400 500 ns Note 4 tDLH — 800 1500 ns Note 5 DC Supply Current Gate On Voltage Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Note 1:
2:
3:
4:
5:
6:
7:
8: Units Conditions
VDD = 12V, Input = 0V mA VDD = 36V, Input = 0V
VDD = 12V, Input = 5V
VDD = 36V, Input = 5V V VDD = 12V (Note 2)
VDD = 36V (Note 2) When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense
MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)
to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
Gate on time tG(ON) and tG(OFF) are not 100% production tested. 2016 Microchip Technology Inc. DS20005677A-page 3
1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings †
Supply Voltage, VDD. +40V
Input Voltage, VIN . –0.5V to +15V
Sense Differential Voltage.±6.5V
SENSE+ or SENSE– to GND . –0.5V to +36V
Timer Voltage . +5.5V
VBOOST Capacitor . 0.01 μF Operating Ratings
Supply Voltage, VDD. +12V to +36V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability. DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,
Gate CL = 1500 pF (IRF540 MOSFET).
Parameters Sym. Min. Typ. Max. — — 1.8 4 — — 2.5 6 — — 1.7 4 — — 2.5 6 Input Threshold — 0.8 1.4 2.0 V — Input Hysteresis — — 0.1 — V — Input Pull-Down Current — 10 20 40 μA Input = 5V Current-Limit Threshold — 30 50 70 mV Note 1 — 16 18 21 — 46 50 52 Gate On-Time (Fixed) tG(ON) 2 6 10 μs Sense Differential 70 mV
(Note 8) Gate Off-Time (Adjustable) tG(OFF) 10 20 50 μs Sense Differential 70 mV,
CT = 0 pF (Note 8) tDLH — 500 1000 ns Note 3 tR — 400 500 ns Note 4 tDLH — 800 1500 ns Note 5 DC Supply Current Gate On Voltage Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Note 1:
2:
3:
4:
5:
6:
7:
8: Units Conditions
VDD = 12V, Input = 0V mA VDD = 36V, Input = 0V
VDD = 12V, Input = 5V
VDD = 36V, Input = 5V V VDD = 12V (Note 2)
VDD = 36V (Note 2) When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense
MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)
to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
Gate on time tG(ON) and tG(OFF) are not 100% production tested. 2016 Microchip Technology Inc. DS20005677A-page 3