Datasheet AD8643-EP (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Power, Rail-to-Rail, Output Precision JFET Amplifier |
| 页数 / 页 | 12 / 3 — AD8643-EP. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. … |
| 文件格式/大小 | PDF / 255 Kb |
| 文件语言 | 英语 |
AD8643-EP. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
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AD8643-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 50 1000 μV −55°C < TA < +85°C 1.8 mV +85°C < TA < +125°C, VCM = 1.5 V 1.9 mV Input Bias Current IB 0.25 1 pA −55°C < TA < +125°C 180 pA Input Offset Current IOS 0.5 pA −55°C < TA < +125°C 60 pA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.5 V 74 93 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.5 to 4.5 V 80 140 V/mV Offset Voltage Drift ΔVOS/ΔT −55°C < TA < +125°C 2.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH 4.95 V IL = 1 mA, −55°C to +125°C 4.94 V Output Voltage Low VOL 0.05 V IL = 1 mA, −55°C to +125°C 0.01 0.05 V Output Current IOUT ±6 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 5 V to 26 V 90 107 dB Supply Current/Amplifier ISY 195 250 μA −55°C < TA < +125°C 270 μA DYNAMIC PERFORMANCE Slew Rate SR 2 V/μs Gain Bandwidth Product GBP 2.5 MHz Phase Margin Øm 50 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4.0 μV p-p Voltage Noise Density eN f = 1 kHz 28.5 nV/√Hz Current Noise Density iN f = 1 kHz 0.5 fA/√Hz Rev. 0 | Page 3 of 12 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 50 1000 μV −55°C < TA < +85°C 1.8 mV +85°C < TA < +125°C, VCM = 1.5 V 1.9 mV Input Bias Current IB 0.25 1 pA −55°C < TA < +125°C 180 pA Input Offset Current IOS 0.5 pA −55°C < TA < +125°C 60 pA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.5 V 74 93 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.5 to 4.5 V 80 140 V/mV Offset Voltage Drift ΔVOS/ΔT −55°C < TA < +125°C 2.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH 4.95 V IL = 1 mA, −55°C to +125°C 4.94 V Output Voltage Low VOL 0.05 V IL = 1 mA, −55°C to +125°C 0.01 0.05 V Output Current IOUT ±6 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 5 V to 26 V 90 107 dB Supply Current/Amplifier ISY 195 250 μA −55°C < TA < +125°C 270 μA DYNAMIC PERFORMANCE Slew Rate SR 2 V/μs Gain Bandwidth Product GBP 2.5 MHz Phase Margin Øm 50 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4.0 μV p-p Voltage Noise Density eN f = 1 kHz 28.5 nV/√Hz Current Noise Density iN f = 1 kHz 0.5 fA/√Hz Rev. 0 | Page 3 of 12 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE