Datasheet AD8672-EP (Analog Devices) - 3

Enhanced Product AD8672-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS, ±5 V
VSY = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise specified.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 20 75 μV −55°C < TA < +125°C 30 125 μV Offset Voltage Drift ∆VOS/∆T −55°C < TA < +125°C 0.3 0.8 μV/°C Input Bias Current IB −14 +3 +14 nA 25°C < TA < 125°C −20 +5 +20 nA −55°C < TA < +125°C −60 +8 +60 nA Input Offset Current IOS −14 +6 +14 nA 25°C < TA < 125°C −20 +6 +20 nA −55°C < TA < +125°C −60 +8 +60 nA Input Voltage Range −2.5 +2.5 V Common-Mode Rejection Ratio CMRR VCM = −2.5 V to +2.5 V 100 120 dB Large Signal Voltage Gain AVO RL = 2 kΩ, VO = −3 V to +3 V 1000 6000 V/mV Input Capacitance Common Mode CINCM 6.25 pF Differential Mode CINDM 7.5 pF Input Resistance Common Mode RIN 3.5 GΩ Differential Mode RINDM 15 MΩ OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 2 kΩ, −55°C to +125°C +3.8 +4.0 V RL = 600 Ω +3.7 +3.9 V Low VOL RL = 2 kΩ, −55°C to +125°C −3.9 −3.8 V RL = 600 Ω −3.8 −3.7 V Output Current IOUT ±10 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4 V to ±18 V 110 130 dB Supply Current per Amplifier ISY VO = 0 V 3 3.5 mA −55°C < TA < +125°C 4.2 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 4 V/μs Settling Time tS To 0.1% (4 V step, G = 1) 1.4 μs To 0.01% (4 V step, G = 1) 5.1 μs Gain Bandwidth Product GBP 10 MHz NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 77 100 nV p-p Voltage Noise Density en f = 1 kHz 2.8 3.8 nV/√Hz Current Noise Density in f = 1 kHz 0.3 pA/√Hz Channel Separation CS f = 1 kHz −130 dB f = 10 kHz −105 dB Rev. 0 | Page 3 of 8 Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Table of Contents Revision History Specifications Electrical Characteristics, ±5 V Electrical Characteristics, ±15 V Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Charateristics Outline Dimensions Ordering Guide