Datasheet AD8608-KGD (Analog Devices) - 4

AD8608-KGD Known Good Die 2.7 V ELECTRICAL SPECIFICATIONS
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VS = 3.5 V, VCM = 2.7 V 20 75 VS = 2.7 V, VCM = 0 V to 2.7 V 80 300 µV −40°C < TA < +125°C 750 µV Input Bias Current IB 0.2 1 pA −40°C < TA < +125°C 300 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +125°C 75 pA Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 80 95 dB −40°C < TA < +125°C 70 85 dB Large Signal Voltage Gain AVO RL = 2 kΩ, VO = 0.5 V to 2.2 V 110 350 V/mV Offset Voltage Drift ΔVOS/ΔT −40°C < TA < +125°C 1.5 6.0 µV/°C INPUT CAPACITANCE Common-Mode Input Capacitance CCOM 8.8 pF Differential Input Capacitance CDIFF 2.6 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 2.6 2.66 V −40°C < TA < +125°C 2.6 V Output Voltage Low VOL IL = 1 mA 25 40 mV −40°C < TA < +125°C 50 mV Output Current IOUT ±30 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 1.2 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 77 92 dB −40°C < TA < +125°C 70 90 dB Supply Current/Amplifier ISY IOUT = 0 mA 1.15 1.4 mA −40°C < TA < +125°C 1.5 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ, CL = 16 pF 5 V/µs Settling Time tS To 0.01%, 0 V to 1 V step, AV = 1 <0.5 µs Unity Gain Bandwidth Product GBP 9 MHz Phase Margin ΦM 50 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz en f = 10 kHz 6.5 nV/√Hz Current Noise Density in f = 1 kHz 0.01 pA/√Hz Rev. 0 | Page 4 of 7 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5 V ELECTRICAL SPECIFICATIONS 2.7 V ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS OUTLINE DIMENSIONS DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS ORDERING GUIDE