Datasheet AD8065-KGD-CHIP (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | High Performance, 145 MHzFastFET Op Amps |
| 页数 / 页 | 8 / 4 — AD8065-KGD-CHIP. Known Good Die. Table 2. Parameter. Test … |
| 文件格式/大小 | PDF / 182 Kb |
| 文件语言 | 英语 |
AD8065-KGD-CHIP. Known Good Die. Table 2. Parameter. Test Conditions/Comments. Min. Typ. Max. Status Unit. Table 3. Parameter
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AD8065-KGD-CHIP Known Good Die
VS = ±12 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 3 pA Input Offset Current 2 pA Open-Loop Gain VO = ±10 V 103 114 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range −12 to +8.5 −12.0 to +9.5 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −11.8 to +11.8 −11.9 to +11.9 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −84 −93 Tested dB Quiescent Current per Amplifier 6.6 7.4 Tested mA 1 GBD = Guaranteed By Design. VS = +5 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 125 155 GBD1 MHz Slew Rate G = +2, VO = 2 V step 105 160 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 1.0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 1 pA Input Offset Current 1 pA Open-Loop Gain VO = 1 V to 4 V 100 113 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range 0 to 1.7 0 to 2.4 GBD1 V Common-Mode Rejection Ratio VCM = 1 V to 2 V −78 −91 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ 0.1 to 4.85 0.03 to 4.95 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −78 −100 Tested dB Quiescent Current per Amplifier 6.4 7.0 Tested mA 1 GBD = Guaranteed by Design. Rev. 0 | Page 4 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
AD8065-KGD-CHIP Known Good Die
VS = ±12 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 3 pA Input Offset Current 2 pA Open-Loop Gain VO = ±10 V 103 114 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range −12 to +8.5 −12.0 to +9.5 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −11.8 to +11.8 −11.9 to +11.9 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −84 −93 Tested dB Quiescent Current per Amplifier 6.6 7.4 Tested mA 1 GBD = Guaranteed By Design. VS = +5 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 125 155 GBD1 MHz Slew Rate G = +2, VO = 2 V step 105 160 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 1.0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 1 pA Input Offset Current 1 pA Open-Loop Gain VO = 1 V to 4 V 100 113 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range 0 to 1.7 0 to 2.4 GBD1 V Common-Mode Rejection Ratio VCM = 1 V to 2 V −78 −91 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ 0.1 to 4.85 0.03 to 4.95 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −78 −100 Tested dB Quiescent Current per Amplifier 6.4 7.0 Tested mA 1 GBD = Guaranteed by Design. Rev. 0 | Page 4 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide