Datasheet OP400 (Analog Devices) - 6

TABLE I. Electrical performance characteristics - continued. Conditions 1/ Test Symbol -55C  TA +125C Group A Device Limits Unit V subgroups type CC = 15 V unless otherwise specified Min Max Input noise voltage density eN fO = 10 Hz, TA = +25C 4/ 7 01 22 nV / fO = 1000 Hz, 22 Hz TA = +25C 4/ Input noise voltage eNT 1 Hz to 100 Hz, 7 01 438 nVRMS TA = +25C Slew rate SR AV = +1, TA = +25C 7 01 0.05 V/s Average input offset voltage TCVIO 8 01 1.2 V/C drift 1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation and tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25C. These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 2/ IVR guaranteed by CMRR test. 3/ ISY limit = total all four amplifiers. 4/ eN at fO = 10 Hz and fO = 1000 Hz is guaranteed by eNT test. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein.
STANDARD
SIZE
5962-87771 MICROCIRCUIT DRAWING A
DLA LAND AND MARITIME REVISION LEVEL SHEET COLUMBUS, OHIO 43218-3990 G 6 DSCC FORM 2234 APR 97