Datasheet IRFZ44NPbF (Infineon) - 6
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 232 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRFZ44NPbF 300 15V J) ID m TOP 10A 18A gy ( 240 L DRIVER BOTTOM 25A VDS RG D.U.T + 180 - VDD anche Ener IAS A 20V t 0.01 p Ω 120 se Aval
Fig 12a.
Unclamped Inductive Test Circuit e Pul ngl 60 V(BR)DSS Si tp E , AS 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit e Pul ngl 60 V(BR)DSS Si tp E , AS 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com