Datasheet Si4435BDY (Vishay) - 4
| 制造商 | Vishay |
| 描述 | P-Channel 30-V (D-S) MOSFET |
| 页数 / 页 | 6 / 4 — Si4435BDY. TYPICAL CHARACTERISTICS. Threshold Voltage. Single Pulse … |
| 文件格式/大小 | PDF / 90 Kb |
| 文件语言 | 英语 |
Si4435BDY. TYPICAL CHARACTERISTICS. Threshold Voltage. Single Pulse Power. Safe Operating Area, Junction-to-Ambient
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Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.6 30 0.4 24 ID = 250 µA 0.2 18 iance (V) ar V er (W) w o 0.0 P 12 GS(th)V - 0.2 6 - 0.4 0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 10-1 10-2 1 10 100 600 T J - T emperature (°C) Time (s)
Threshold Voltage Single Pulse Power
100 Limited by R I (DS)on* DM Limited P(t) = 0.0001 10 P(t) = 0.001 ID(on) 1 Limited P(t) = 0.01 ain Current (A) P(t) = 0.1 - Dr I D P(t) = 1 TA = 25 °C 0.1 P(t) = 10 Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient e T 0.2 Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 70 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com Document Number: 72123 4 S09-0767-Rev. D, 04-May-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.6 30 0.4 24 ID = 250 µA 0.2 18 iance (V) ar V er (W) w o 0.0 P 12 GS(th)V - 0.2 6 - 0.4 0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 10-1 10-2 1 10 100 600 T J - T emperature (°C) Time (s)
Threshold Voltage Single Pulse Power
100 Limited by R I (DS)on* DM Limited P(t) = 0.0001 10 P(t) = 0.001 ID(on) 1 Limited P(t) = 0.01 ain Current (A) P(t) = 0.1 - Dr I D P(t) = 1 TA = 25 °C 0.1 P(t) = 10 Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient e T 0.2 Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 70 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com Document Number: 72123 4 S09-0767-Rev. D, 04-May-09