Datasheet SB120 - SB160 (Diodes)
| 制造商 | Diodes |
| 描述 | 1.0A Schottky Barrier Rectifier |
| 页数 / 页 | 3 / 1 — SB120 - SB160. 1.0A SCHOTTKY BARRIER RECTIFIER. Features. Lead Free … |
| 文件格式/大小 | PDF / 83 Kb |
| 文件语言 | 英语 |
SB120 - SB160. 1.0A SCHOTTKY BARRIER RECTIFIER. Features. Lead Free Finish, RoHS Compliant (Note 3). Mechanical Data
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SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features
· Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability A B A · High Current Capability and Low Forward Voltage Drop · Surge Overload Rating to 40A Peak · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C ·
Lead Free Finish, RoHS Compliant (Note 3)
D
Mechanical Data
· Case: DO-41 Plastic
DO-41 Plastic
· Case Material: Molded Plastic. UL Flammability
Dim Min Max
Classification Rating 94V-0
A
25.40 ¾ · Moisture Sensitivity: Level 1 per J-STD-020C
B
4.06 5.21 · Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208
C
0.71 0.864 · Polarity: Cathode Band
D
2.00 2.72 · Mounting Position: Any
All Dimensions in mm
· Ordering Information: See Last Page · Marking: Type Number · Weight: 0.3 grams (approximate)
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol SB120 SB130 SB140 SB150 SB160 Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 20 30 40 50 60 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 14 21 28 35 42 V Average Rectified Output Current I (Note 1) (See Figure 1) O 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 40 A (JEDEC Method) Forward Voltage (Note 2) @ IF = 1.0A VFM 0.50 0.70 V Peak Reverse Current @ T 0.5 A = 25°C I mA at Rated DC Blocking Voltage (Note 2) @ T RM A = 100°C 10 5.0 Typical Thermal Resistance Junction to Lead (Note 1) RqJL 15 °C/W Typical Thermal Resistance Junction to Ambient RqJA 50 °C/W Operating Temperature Range Tj -65 to +125 -65 to +150 °C Storage Temperature Range TSTG -65 to +150 Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration test pulse used to minimize self-heating effect. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23022 Rev. 5 - 2 1 of 3 SB120-SB160
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· Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability A B A · High Current Capability and Low Forward Voltage Drop · Surge Overload Rating to 40A Peak · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C ·
Lead Free Finish, RoHS Compliant (Note 3)
D
Mechanical Data
· Case: DO-41 Plastic
DO-41 Plastic
· Case Material: Molded Plastic. UL Flammability
Dim Min Max
Classification Rating 94V-0
A
25.40 ¾ · Moisture Sensitivity: Level 1 per J-STD-020C
B
4.06 5.21 · Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208
C
0.71 0.864 · Polarity: Cathode Band
D
2.00 2.72 · Mounting Position: Any
All Dimensions in mm
· Ordering Information: See Last Page · Marking: Type Number · Weight: 0.3 grams (approximate)
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol SB120 SB130 SB140 SB150 SB160 Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 20 30 40 50 60 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 14 21 28 35 42 V Average Rectified Output Current I (Note 1) (See Figure 1) O 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 40 A (JEDEC Method) Forward Voltage (Note 2) @ IF = 1.0A VFM 0.50 0.70 V Peak Reverse Current @ T 0.5 A = 25°C I mA at Rated DC Blocking Voltage (Note 2) @ T RM A = 100°C 10 5.0 Typical Thermal Resistance Junction to Lead (Note 1) RqJL 15 °C/W Typical Thermal Resistance Junction to Ambient RqJA 50 °C/W Operating Temperature Range Tj -65 to +125 -65 to +150 °C Storage Temperature Range TSTG -65 to +150 Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case. 2. Short duration test pulse used to minimize self-heating effect. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23022 Rev. 5 - 2 1 of 3 SB120-SB160
www.diodes.com ã
Diodes Incorporated