Datasheet MBRF2035 - MBRF20100 (Taiwan Semiconductor)
| 制造商 | Taiwan Semiconductor |
| 描述 | 20A, 35V - 100V Isolated Schottky Barrier Rectifiers |
| 页数 / 页 | 4 / 1 — MBRF2035 - MBRF20100. 20A, 35V - 100V Isolated Schottky Barrier … |
| 文件格式/大小 | PDF / 200 Kb |
| 文件语言 | 英语 |
MBRF2035 - MBRF20100. 20A, 35V - 100V Isolated Schottky Barrier Rectifiers. FEATURES. MECHANICAL DATA. ITO-220AC. Case:. Terminal:
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MBRF2035 - MBRF20100
Taiwan Semiconductor CREAT BY ART
20A, 35V - 100V Isolated Schottky Barrier Rectifiers FEATURES
- Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 1 2
MECHANICAL DATA ITO-220AC Case:
ITO-220AC Molding compound: UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.8 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL UNIT 2035 2045 2050 2060 2090 20100
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 V Maximum RMS voltage VRMS 24 31 35 42 63 70 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current I (Rated V FRM 40 A R, square wave, 20KHz) Peak forward surge current, 8.3 ms single half I sine-wave superimposed on rated load FSM 150 A Peak repetitive reverse surge current (Note 1) IRRM 1 0.5 A Maximum instantaneous forward voltage (Note 2) IF=20A, TJ=25°C VF V 0.75 0.82 0.95 IF=20A, TJ=125°C 0.65 0.72 0.87 TJ=25°C 0.2 0.1 Maximum reverse current @ rated VR IR mA TJ=125°C 15 10 5 Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 3 °C/W Operating junction temperature range TJ - 55 to +150 °C Storage temperature range TSTG - 55 to +150 °C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Version: J1512
Taiwan Semiconductor CREAT BY ART
20A, 35V - 100V Isolated Schottky Barrier Rectifiers FEATURES
- Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 1 2
MECHANICAL DATA ITO-220AC Case:
ITO-220AC Molding compound: UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.8 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL UNIT 2035 2045 2050 2060 2090 20100
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 V Maximum RMS voltage VRMS 24 31 35 42 63 70 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current I (Rated V FRM 40 A R, square wave, 20KHz) Peak forward surge current, 8.3 ms single half I sine-wave superimposed on rated load FSM 150 A Peak repetitive reverse surge current (Note 1) IRRM 1 0.5 A Maximum instantaneous forward voltage (Note 2) IF=20A, TJ=25°C VF V 0.75 0.82 0.95 IF=20A, TJ=125°C 0.65 0.72 0.87 TJ=25°C 0.2 0.1 Maximum reverse current @ rated VR IR mA TJ=125°C 15 10 5 Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 3 °C/W Operating junction temperature range TJ - 55 to +150 °C Storage temperature range TSTG - 55 to +150 °C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Version: J1512